Gross, B. ; Sessler, Gerhard M. ; Seggern, H. von ; West, J. E. (1979)
Hole transit in Teflon films.
In: Applied Physics Letters, 34 (9)
doi: 10.1063/1.90864
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
The transit of excess holes through 25‐μm Teflon films has been observed. The holes are generated by electron‐pulse ionization in the near‐surface region of the samples. From the transit time we determine a mobility of 2×10−9 cm2/V s, independent of field, carrier density, penetration depth of the primary electrons, and length of the electron pulse. Results are discussed in terms of the conventional concept of trap‐modulated mobility and of the alternative theory of dispersive hopping.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 1979 |
| Autor(en): | Gross, B. ; Sessler, Gerhard M. ; Seggern, H. von ; West, J. E. |
| Art des Eintrags: | Bibliographie |
| Titel: | Hole transit in Teflon films |
| Sprache: | Englisch |
| Publikationsjahr: | 1 Mai 1979 |
| Verlag: | American Institute of Physics Publishing |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Applied Physics Letters |
| Jahrgang/Volume einer Zeitschrift: | 34 |
| (Heft-)Nummer: | 9 |
| DOI: | 10.1063/1.90864 |
| Kurzbeschreibung (Abstract): | The transit of excess holes through 25‐μm Teflon films has been observed. The holes are generated by electron‐pulse ionization in the near‐surface region of the samples. From the transit time we determine a mobility of 2×10−9 cm2/V s, independent of field, carrier density, penetration depth of the primary electrons, and length of the electron pulse. Results are discussed in terms of the conventional concept of trap‐modulated mobility and of the alternative theory of dispersive hopping. |
| Freie Schlagworte: | FILMS, HOLES, TEFLON, PULSES, IONIZATION, SURFACES, MOBILITY, ELECTRIC FIELDS, CARRIER DENSITY, PENETRATION DEPTH |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Elektronische Materialeigenschaften |
| Hinterlegungsdatum: | 13 Jun 2013 07:34 |
| Letzte Änderung: | 13 Aug 2021 14:08 |
| PPN: | |
| Sponsoren: | We are indebted to the Deutsche Forschungsgemeinschaft for financial support (B.G.) is also grateful to the Deutsche Akademische Austauschdienst and the Brazilian National Research Council for financial assistance. |
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