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Hole transit in Teflon films

Gross, B. and Sessler, Gerhard M. and von Seggern, H. and West, J. E. (1979):
Hole transit in Teflon films.
34, In: Applied Physics Letters, (9), pp. 555-557. American Institute of Physics Publishing, ISSN 00036951,
[Article]

Abstract

The transit of excess holes through 25‐μm Teflon films has been observed. The holes are generated by electron‐pulse ionization in the near‐surface region of the samples. From the transit time we determine a mobility of 2×10−9 cm2/V s, independent of field, carrier density, penetration depth of the primary electrons, and length of the electron pulse. Results are discussed in terms of the conventional concept of trap‐modulated mobility and of the alternative theory of dispersive hopping.

Item Type: Article
Erschienen: 1979
Creators: Gross, B. and Sessler, Gerhard M. and von Seggern, H. and West, J. E.
Title: Hole transit in Teflon films
Language: English
Abstract:

The transit of excess holes through 25‐μm Teflon films has been observed. The holes are generated by electron‐pulse ionization in the near‐surface region of the samples. From the transit time we determine a mobility of 2×10−9 cm2/V s, independent of field, carrier density, penetration depth of the primary electrons, and length of the electron pulse. Results are discussed in terms of the conventional concept of trap‐modulated mobility and of the alternative theory of dispersive hopping.

Journal or Publication Title: Applied Physics Letters
Volume: 34
Number: 9
Publisher: American Institute of Physics Publishing
Uncontrolled Keywords: FILMS, HOLES, TEFLON, PULSES, IONIZATION, SURFACES, MOBILITY, ELECTRIC FIELDS, CARRIER DENSITY, PENETRATION DEPTH
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Electronic Materials
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 13 Jun 2013 07:34
Official URL: http://dx.doi.org/10.1063/1.90864
Identification Number: doi:10.1063/1.90864
Funders: We are indebted to the Deutsche Forschungsgemeinschaft for financial support (B.G.) is also grateful to the Deutsche Akademische Austauschdienst and the Brazilian National Research Council for financial assistance.
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