Dasgupta, Subho ; Kruk, Robert ; Mechau, Norman ; Hahn, Horst (2011)
Inkjet Printed, High Mobility Inorganic-Oxide Field Effect Transistors Processed at Room Temperature.
In: ACS Nano, 5 (12)
doi: 10.1021/nn202992v
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Printed electronics (PE) represents any electronic devices, components or circuits that can be processed using modern-day printing techniques. Field-effect transistors (FETs) and logics are being printed with intended applications requiring simple circuitry on large, flexible (e.g., polymer) substrates for low-cost and disposable electronics. Although organic materials have commonly been chosen for their easy printability and low temperature processability, high quality inorganic oxide-semiconductors are also being considered recently. The intrinsic mobility of the inorganic semiconductors are always by far superior than the organic ones; however, the commonly expressed reservations against the inorganic-based printed electronics are due to major issues, such as high processing temperatures and their incompatibility with solution-processing. Here we show a possibility to circumvent these difficulties and demonstrate a room-temperature processed and inkjet printed inorganic-oxide FET where the transistor channel is composed of an interconnected nanoparticle network and a solid polymer electrolyte serves as the dielectric. Even an extremely conservative estimation of the field-effect mobility of such a device yields a value of 0.8 cm2/(V s), which is still exceptionally large for a room temperature processed and printed transistor from inorganic materials.
Typ des Eintrags: | Artikel |
---|---|
Erschienen: | 2011 |
Autor(en): | Dasgupta, Subho ; Kruk, Robert ; Mechau, Norman ; Hahn, Horst |
Art des Eintrags: | Bibliographie |
Titel: | Inkjet Printed, High Mobility Inorganic-Oxide Field Effect Transistors Processed at Room Temperature |
Sprache: | Englisch |
Publikationsjahr: | 27 Dezember 2011 |
Verlag: | ACS Publications |
Titel der Zeitschrift, Zeitung oder Schriftenreihe: | ACS Nano |
Jahrgang/Volume einer Zeitschrift: | 5 |
(Heft-)Nummer: | 12 |
DOI: | 10.1021/nn202992v |
Kurzbeschreibung (Abstract): | Printed electronics (PE) represents any electronic devices, components or circuits that can be processed using modern-day printing techniques. Field-effect transistors (FETs) and logics are being printed with intended applications requiring simple circuitry on large, flexible (e.g., polymer) substrates for low-cost and disposable electronics. Although organic materials have commonly been chosen for their easy printability and low temperature processability, high quality inorganic oxide-semiconductors are also being considered recently. The intrinsic mobility of the inorganic semiconductors are always by far superior than the organic ones; however, the commonly expressed reservations against the inorganic-based printed electronics are due to major issues, such as high processing temperatures and their incompatibility with solution-processing. Here we show a possibility to circumvent these difficulties and demonstrate a room-temperature processed and inkjet printed inorganic-oxide FET where the transistor channel is composed of an interconnected nanoparticle network and a solid polymer electrolyte serves as the dielectric. Even an extremely conservative estimation of the field-effect mobility of such a device yields a value of 0.8 cm2/(V s), which is still exceptionally large for a room temperature processed and printed transistor from inorganic materials. |
Freie Schlagworte: | printed electronics; inorganic oxide FET; nanoparticle channel transistor; electrochemical gating; high mobility; room temperature processing |
Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Gemeinschaftslabor Nanomaterialien 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften |
Hinterlegungsdatum: | 19 Feb 2013 09:14 |
Letzte Änderung: | 05 Mär 2013 10:05 |
PPN: | |
Sponsoren: | The authors acknowledge financial support by Deutsche Forschungsgemeinschaft (DFG) under contract HA1344/25-1, by the Center for Functional Nanostructures (CFN) project D4.4, and by the State of Hesse for a major equipment grant for the Joint Research Laboratory Nanomaterials. |
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