Lattemann, M. ; Helmersson, U. ; Greene, J. E. (2010)
Fully dense, non-faceted 111-textured high power impulse magnetron sputtering TiN films grown in the absence of substrate heating and bias.
In: Thin Solid Films, 518 (21)
doi: 10.1016/j.tsf.2010.05.064
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
We demonstrate the deposition of fully dense, stoichiometric TiN films on amorphous SiO2 by reactive high power impulse magnetron sputtering (HiPIMS) in the absence of both substrate heating and applied bias. Contrary to the highly underdense layers obtained by reactive dc magnetron sputtering (dcMS) under similar conditions, the film nanostructure exhibits neither intra- nor intergrain porosity, exhibiting a strong 111 preferred orientation with flat surfaces. Competitive grain growth occurs only during the early stages of deposition (< 100 nm). The strong differences in the kinetically-limited nanostructural evolution for HiPIMS vs. dcMS are explained by high real-time deposition rates with long relaxation times, high ionization probabilities for Ti, and broad ion energy distributions.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2010 |
| Autor(en): | Lattemann, M. ; Helmersson, U. ; Greene, J. E. |
| Art des Eintrags: | Bibliographie |
| Titel: | Fully dense, non-faceted 111-textured high power impulse magnetron sputtering TiN films grown in the absence of substrate heating and bias |
| Sprache: | Englisch |
| Publikationsjahr: | 31 August 2010 |
| Verlag: | Elsevier Science Publishing Company |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Thin Solid Films |
| Jahrgang/Volume einer Zeitschrift: | 518 |
| (Heft-)Nummer: | 21 |
| DOI: | 10.1016/j.tsf.2010.05.064 |
| Kurzbeschreibung (Abstract): | We demonstrate the deposition of fully dense, stoichiometric TiN films on amorphous SiO2 by reactive high power impulse magnetron sputtering (HiPIMS) in the absence of both substrate heating and applied bias. Contrary to the highly underdense layers obtained by reactive dc magnetron sputtering (dcMS) under similar conditions, the film nanostructure exhibits neither intra- nor intergrain porosity, exhibiting a strong 111 preferred orientation with flat surfaces. Competitive grain growth occurs only during the early stages of deposition (< 100 nm). The strong differences in the kinetically-limited nanostructural evolution for HiPIMS vs. dcMS are explained by high real-time deposition rates with long relaxation times, high ionization probabilities for Ti, and broad ion energy distributions. |
| Freie Schlagworte: | Pulsed magnetron sputtering, High power impulse magnetron sputtering (HiPIMS), High power pulsed magnetron sputtering (HPPMS), Titanium nitride, Transmission electron microscopy; Thin films, Nucleation and growth, Ion-assisted deposition |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Gemeinschaftslabor Nanomaterialien 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften |
| Hinterlegungsdatum: | 15 Feb 2013 09:41 |
| Letzte Änderung: | 05 Mär 2013 10:05 |
| PPN: | |
| Sponsoren: | The authors gratefully acknowledge the financial support during the course of this research from the Swedish Research Council, the Swedish Foundation for Strategic Research, and the U.S. Department of Energy, Division of Materials Science,, grant DEFG02-91ER45439 through the University of Illinois Frederick Seitz Materials Research Laboratory (J.E.G.). |
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