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Non-destructive and non-preparative chemical nanometrology of internal material interfaces at tunable high information depths

Pollakowski, Beatrix ; Hoffmann, Peter ; Kosinova, Marina ; Baake, Olaf ; Trunova, Valentina ; Unterumsberger, Rainer ; Ensinger, Wolfgang ; Beckhoff, Burkhard (2013)
Non-destructive and non-preparative chemical nanometrology of internal material interfaces at tunable high information depths.
In: Analytical Chemistry, 85 (1)
doi: 10.1021/ac3024872
Artikel, Bibliographie

Kurzbeschreibung (Abstract)

Improved performance of functional nano-scaled devices involve novel materials, more complex structures and advanced technological processes. The transitions to heavier elements and to thicker layers restrict access to the chemical and physical characterization of the internal material interfaces. Conventional non-destructive characterization techniques such as Xray photo-electron spectroscopy suffer from sensitivity and quantification restrictions whereas destructive techniques like ion mass spectrometry may modify the chemical properties of internal interfaces. Thus, novel methods providing sufficient sensitivity, reliable quantification and high information depths to reveal interfacial parameters are needed for R&D challenges on the nano-scale. Measurement strategies adapted to nano-scaled samples enable the combination of Near-Edge X-ray Absorption Fine Structure and Grazing Incidence X-ray Fluorescence to allow for chemical nanometrology of internal material interfaces. Their validation has been performed at nano-layered model structures consisting of a silicon substrate, a physically vapor deposited Ni metal layer and, on top, a chemically vapor deposited BxCyNz light element layer.

Typ des Eintrags: Artikel
Erschienen: 2013
Autor(en): Pollakowski, Beatrix ; Hoffmann, Peter ; Kosinova, Marina ; Baake, Olaf ; Trunova, Valentina ; Unterumsberger, Rainer ; Ensinger, Wolfgang ; Beckhoff, Burkhard
Art des Eintrags: Bibliographie
Titel: Non-destructive and non-preparative chemical nanometrology of internal material interfaces at tunable high information depths
Sprache: Englisch
Publikationsjahr: 2 Januar 2013
Verlag: ACS Publications
Titel der Zeitschrift, Zeitung oder Schriftenreihe: Analytical Chemistry
Jahrgang/Volume einer Zeitschrift: 85
(Heft-)Nummer: 1
DOI: 10.1021/ac3024872
Kurzbeschreibung (Abstract):

Improved performance of functional nano-scaled devices involve novel materials, more complex structures and advanced technological processes. The transitions to heavier elements and to thicker layers restrict access to the chemical and physical characterization of the internal material interfaces. Conventional non-destructive characterization techniques such as Xray photo-electron spectroscopy suffer from sensitivity and quantification restrictions whereas destructive techniques like ion mass spectrometry may modify the chemical properties of internal interfaces. Thus, novel methods providing sufficient sensitivity, reliable quantification and high information depths to reveal interfacial parameters are needed for R&D challenges on the nano-scale. Measurement strategies adapted to nano-scaled samples enable the combination of Near-Edge X-ray Absorption Fine Structure and Grazing Incidence X-ray Fluorescence to allow for chemical nanometrology of internal material interfaces. Their validation has been performed at nano-layered model structures consisting of a silicon substrate, a physically vapor deposited Ni metal layer and, on top, a chemically vapor deposited BxCyNz light element layer.

Fachbereich(e)/-gebiet(e): 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Materialanalytik
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft
11 Fachbereich Material- und Geowissenschaften
Hinterlegungsdatum: 17 Dez 2012 10:05
Letzte Änderung: 05 Mär 2013 10:04
PPN:
Sponsoren: The authors are grateful for the financial support by Deutsche Forschungsgemeinschaft (DFG), Grants EN 207/25-1 and BE 1372/6-1,, and by Russian Fond Fundamental Research (RFFI), Grant 10-03-91332.
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