Belousov, Anton ; Mustafin, E. ; Ensinger, Wolfgang (2012)
Short and long term ionizing radiation effects on charge-coupled devices in radiation environment of high-intensity heavy ion accelerators.
In: Journal of Instrumentation, 7 (11)
doi: 10.1088/1748-0221/7/11/C11002
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Radiation effects on semiconductor devices is a topical issue for high-intensity accelerator projects. In particular it concerns Charge-Coupled Device (CCD) cameras, which are widely used for beam profile monitoring and surveillance in high radiation environment. One should have a clear idea of short and long term radiation effects on such devices. To study these effects, a CCD camera was placed in positions less than half meter away from beam loss point. Primary heavy ion beam of 0.95GeV/n Uranium was dumped into a thick aluminium target creating high fluences of secondary particles (e.g., gammas, neutrons, protons). Effects of these particles on CCD camera were scored with LabView based acquisition software. Monte Carlo calculations with FLUKA code were performed to obtain fluence distributions for different particles and make relevant comparisons. Long term total ionising dose effects are represented by dark current increase, which was scored throughout experiment. Instant radiation effects are represented by creation of charge in CCD cells by ionising particles. Relation of this charge to beam intensity was obtained for different camera positions and fluences within 5 orders of magnitude ranges. With high intensities this charge is so high that it may dramatically influence data obtained from CCD camera used in high radiation environment. The linearity of described above relation confirms linear response of CCD to ionizing radiation. It gives an opportunity to find a new application to CCD cameras as beam loss monitors (BLM).
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2012 |
| Autor(en): | Belousov, Anton ; Mustafin, E. ; Ensinger, Wolfgang |
| Art des Eintrags: | Bibliographie |
| Titel: | Short and long term ionizing radiation effects on charge-coupled devices in radiation environment of high-intensity heavy ion accelerators |
| Sprache: | Englisch |
| Publikationsjahr: | 6 November 2012 |
| Verlag: | IOP Publishing |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Journal of Instrumentation |
| Jahrgang/Volume einer Zeitschrift: | 7 |
| (Heft-)Nummer: | 11 |
| DOI: | 10.1088/1748-0221/7/11/C11002 |
| Kurzbeschreibung (Abstract): | Radiation effects on semiconductor devices is a topical issue for high-intensity accelerator projects. In particular it concerns Charge-Coupled Device (CCD) cameras, which are widely used for beam profile monitoring and surveillance in high radiation environment. One should have a clear idea of short and long term radiation effects on such devices. To study these effects, a CCD camera was placed in positions less than half meter away from beam loss point. Primary heavy ion beam of 0.95GeV/n Uranium was dumped into a thick aluminium target creating high fluences of secondary particles (e.g., gammas, neutrons, protons). Effects of these particles on CCD camera were scored with LabView based acquisition software. Monte Carlo calculations with FLUKA code were performed to obtain fluence distributions for different particles and make relevant comparisons. Long term total ionising dose effects are represented by dark current increase, which was scored throughout experiment. Instant radiation effects are represented by creation of charge in CCD cells by ionising particles. Relation of this charge to beam intensity was obtained for different camera positions and fluences within 5 orders of magnitude ranges. With high intensities this charge is so high that it may dramatically influence data obtained from CCD camera used in high radiation environment. The linearity of described above relation confirms linear response of CCD to ionizing radiation. It gives an opportunity to find a new application to CCD cameras as beam loss monitors (BLM). |
| Freie Schlagworte: | Radiation damage to detector materials (solid state); Radiation damage to electronic components; Dosimetry concepts and apparatus; Radiation calculations |
| Zusätzliche Informationen: | 14th INTERNATIONAL WORKSHOP ON RADIATION IMAGING DETECTORS, 1–5 JULY 2012, FIGUEIRA DA FOZ, PORTUGAL |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Materialanalytik 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften |
| Hinterlegungsdatum: | 09 Nov 2012 11:18 |
| Letzte Änderung: | 05 Mär 2013 10:03 |
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