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Interdiffusion at the BaCuSeF/ZnTe interface

Zakutayev, Andriy and Tate, Janet and Xie, Sujing and Gibbons, Brady J. and Platt, Heather A. S. and Keszler, Douglas A. and Barati, Alireza and Klein, Andreas and Jaegermann, Wolfram (2011):
Interdiffusion at the BaCuSeF/ZnTe interface.
519, In: Thin Solid Films, (21), pp. 7369-7373, ISSN 00406090, [Online-Edition: http://dx.doi.org/10.1016/j.tsf.2010.12.125],
[Article]

Abstract

BaCuSeF/ZnTe is a model system to investigate physical and chemical properties of the interfaces of non-oxide wide-bandgap p-type semiconductors with materials used in chalcogenide solar cells. The BaCuSeF/ZnTe interface was studied using electron microscopy and photoelectron spectroscopy. Both techniques indicate that Se and Cu from BaCuSeF diffuse into ZnTe creating an interdiffused layer between these two materials. The interdiffusion may be attributed to the differences in materials formation enthalpies and to Fermi level pinning in BaCuSeF.

Item Type: Article
Erschienen: 2011
Creators: Zakutayev, Andriy and Tate, Janet and Xie, Sujing and Gibbons, Brady J. and Platt, Heather A. S. and Keszler, Douglas A. and Barati, Alireza and Klein, Andreas and Jaegermann, Wolfram
Title: Interdiffusion at the BaCuSeF/ZnTe interface
Language: English
Abstract:

BaCuSeF/ZnTe is a model system to investigate physical and chemical properties of the interfaces of non-oxide wide-bandgap p-type semiconductors with materials used in chalcogenide solar cells. The BaCuSeF/ZnTe interface was studied using electron microscopy and photoelectron spectroscopy. Both techniques indicate that Se and Cu from BaCuSeF diffuse into ZnTe creating an interdiffused layer between these two materials. The interdiffusion may be attributed to the differences in materials formation enthalpies and to Fermi level pinning in BaCuSeF.

Journal or Publication Title: Thin Solid Films
Volume: 519
Number: 21
Uncontrolled Keywords: BaCuChF; p-Type transparent conductor; Wide-band gap semiconductor; Thin film chalcogenide solar cells; Scanning transmission electron microscopy; Energy dispersive x-ray analysis; Copper vacancy; Fermi level pinning
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Surface Science
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > D - Component properties > Subproject D3: Function and fatigue of oxide electrodes in organic light emitting diodes
11 Department of Materials and Earth Sciences > Material Science
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > D - Component properties
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue
11 Department of Materials and Earth Sciences
Zentrale Einrichtungen
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres
DFG-Collaborative Research Centres (incl. Transregio)
Date Deposited: 17 Sep 2012 13:11
Official URL: http://dx.doi.org/10.1016/j.tsf.2010.12.125
Additional Information:

SFB 595 D3

Identification Number: doi:10.1016/j.tsf.2010.12.125
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