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Polarization dependence of Schottky barrier heights at interfaces of ferroelectrics determined by photoelectron spectroscopy

Chen, Feng and Klein, Andreas (2012):
Polarization dependence of Schottky barrier heights at interfaces of ferroelectrics determined by photoelectron spectroscopy.
In: Physical Review B, American Physical Society, pp. 094105, 86, (9), ISSN 1098-0121, [Online-Edition: http://dx.doi.org/10.1103/PhysRevB.86.094105],
[Article]

Abstract

Ferroelectric polarization in thin films is stabilized by screening charges in the metal electrodes. Imperfect screening of the polarization charge strongly modifies the film's capacitance and should lead to a variation of the Schottky barrier height at the interface with polarization direction. An experimental approach based on photoelectron spectroscopy is introduced which allows us to quantitatively determine Schottky barrier heights at ferroelectric/metal interfaces in dependence on polarization. The procedure is exemplified for BaTiO3 single crystals with RuO2 and Pt electrodes, revealing a variation of Schottky barrier height of 1.1 and 0.65 eV in dependence on polarization for RuO2 and Pt electrodes, respectively. Inhomogeneous barrier switching is observed for Pt electrodes, which may be related to defect formation during metal deposition.

Item Type: Article
Erschienen: 2012
Creators: Chen, Feng and Klein, Andreas
Title: Polarization dependence of Schottky barrier heights at interfaces of ferroelectrics determined by photoelectron spectroscopy
Language: English
Abstract:

Ferroelectric polarization in thin films is stabilized by screening charges in the metal electrodes. Imperfect screening of the polarization charge strongly modifies the film's capacitance and should lead to a variation of the Schottky barrier height at the interface with polarization direction. An experimental approach based on photoelectron spectroscopy is introduced which allows us to quantitatively determine Schottky barrier heights at ferroelectric/metal interfaces in dependence on polarization. The procedure is exemplified for BaTiO3 single crystals with RuO2 and Pt electrodes, revealing a variation of Schottky barrier height of 1.1 and 0.65 eV in dependence on polarization for RuO2 and Pt electrodes, respectively. Inhomogeneous barrier switching is observed for Pt electrodes, which may be related to defect formation during metal deposition.

Journal or Publication Title: Physical Review B
Volume: 86
Number: 9
Publisher: American Physical Society
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Surface Science
Zentrale Einrichtungen
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > B - Characterisation
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > B - Characterisation > Subproject B7: Polarisation and charging in electrical fatigue ferroelectrics
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres
DFG-Collaborative Research Centres (incl. Transregio)
Date Deposited: 17 Sep 2012 12:25
Official URL: http://dx.doi.org/10.1103/PhysRevB.86.094105
Additional Information:

SFB 595 B7

Identification Number: doi:10.1103/PhysRevB.86.094105
Funders: This work was supported by the German Science Foundation (DFG) within the collaborative research center SFB 595 (Electrical Fatigue of Functional Materials).
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