Chen, Feng ; Klein, Andreas (2012)
Polarization dependence of Schottky barrier heights at interfaces of ferroelectrics determined by photoelectron spectroscopy.
In: Physical Review B, 86 (9)
doi: 10.1103/PhysRevB.86.094105
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Ferroelectric polarization in thin films is stabilized by screening charges in the metal electrodes. Imperfect screening of the polarization charge strongly modifies the film's capacitance and should lead to a variation of the Schottky barrier height at the interface with polarization direction. An experimental approach based on photoelectron spectroscopy is introduced which allows us to quantitatively determine Schottky barrier heights at ferroelectric/metal interfaces in dependence on polarization. The procedure is exemplified for BaTiO3 single crystals with RuO2 and Pt electrodes, revealing a variation of Schottky barrier height of 1.1 and 0.65 eV in dependence on polarization for RuO2 and Pt electrodes, respectively. Inhomogeneous barrier switching is observed for Pt electrodes, which may be related to defect formation during metal deposition.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2012 |
| Autor(en): | Chen, Feng ; Klein, Andreas |
| Art des Eintrags: | Bibliographie |
| Titel: | Polarization dependence of Schottky barrier heights at interfaces of ferroelectrics determined by photoelectron spectroscopy |
| Sprache: | Englisch |
| Publikationsjahr: | 5 September 2012 |
| Verlag: | American Physical Society |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Physical Review B |
| Jahrgang/Volume einer Zeitschrift: | 86 |
| (Heft-)Nummer: | 9 |
| DOI: | 10.1103/PhysRevB.86.094105 |
| Kurzbeschreibung (Abstract): | Ferroelectric polarization in thin films is stabilized by screening charges in the metal electrodes. Imperfect screening of the polarization charge strongly modifies the film's capacitance and should lead to a variation of the Schottky barrier height at the interface with polarization direction. An experimental approach based on photoelectron spectroscopy is introduced which allows us to quantitatively determine Schottky barrier heights at ferroelectric/metal interfaces in dependence on polarization. The procedure is exemplified for BaTiO3 single crystals with RuO2 and Pt electrodes, revealing a variation of Schottky barrier height of 1.1 and 0.65 eV in dependence on polarization for RuO2 and Pt electrodes, respectively. Inhomogeneous barrier switching is observed for Pt electrodes, which may be related to defect formation during metal deposition. |
| Zusätzliche Informationen: | SFB 595 B7 |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung DFG-Sonderforschungsbereiche (inkl. Transregio) DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche Zentrale Einrichtungen DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > B - Charakterisierung DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > B - Charakterisierung > Teilprojekt B7:Polarisation und Ladung in elektrisch ermüdeten Ferroelektrika |
| Hinterlegungsdatum: | 17 Sep 2012 12:25 |
| Letzte Änderung: | 22 Apr 2022 18:19 |
| PPN: | |
| Sponsoren: | This work was supported by the German Science Foundation (DFG) within the collaborative research center SFB 595 (Electrical Fatigue of Functional Materials). |
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