Chen, Feng and Klein, Andreas (2012):
Polarization dependence of Schottky barrier heights at interfaces of ferroelectrics determined by photoelectron spectroscopy.
86, In: Physical Review B, (9), American Physical Society, pp. 094105, ISSN 1098-0121, [Online-Edition: http://dx.doi.org/10.1103/PhysRevB.86.094105],
[Article]
Abstract
Ferroelectric polarization in thin films is stabilized by screening charges in the metal electrodes. Imperfect screening of the polarization charge strongly modifies the film's capacitance and should lead to a variation of the Schottky barrier height at the interface with polarization direction. An experimental approach based on photoelectron spectroscopy is introduced which allows us to quantitatively determine Schottky barrier heights at ferroelectric/metal interfaces in dependence on polarization. The procedure is exemplified for BaTiO3 single crystals with RuO2 and Pt electrodes, revealing a variation of Schottky barrier height of 1.1 and 0.65 eV in dependence on polarization for RuO2 and Pt electrodes, respectively. Inhomogeneous barrier switching is observed for Pt electrodes, which may be related to defect formation during metal deposition.
| Item Type: | Article |
|---|---|
| Erschienen: | 2012 |
| Creators: | Chen, Feng and Klein, Andreas |
| Title: | Polarization dependence of Schottky barrier heights at interfaces of ferroelectrics determined by photoelectron spectroscopy |
| Language: | English |
| Abstract: | Ferroelectric polarization in thin films is stabilized by screening charges in the metal electrodes. Imperfect screening of the polarization charge strongly modifies the film's capacitance and should lead to a variation of the Schottky barrier height at the interface with polarization direction. An experimental approach based on photoelectron spectroscopy is introduced which allows us to quantitatively determine Schottky barrier heights at ferroelectric/metal interfaces in dependence on polarization. The procedure is exemplified for BaTiO3 single crystals with RuO2 and Pt electrodes, revealing a variation of Schottky barrier height of 1.1 and 0.65 eV in dependence on polarization for RuO2 and Pt electrodes, respectively. Inhomogeneous barrier switching is observed for Pt electrodes, which may be related to defect formation during metal deposition. |
| Journal or Publication Title: | Physical Review B |
| Volume: | 86 |
| Number: | 9 |
| Publisher: | American Physical Society |
| Divisions: | 11 Department of Materials and Earth Sciences > Material Science > Surface Science Zentrale Einrichtungen DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > B - Characterisation DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > B - Characterisation > Subproject B7: Polarisation and charging in electrical fatigue ferroelectrics 11 Department of Materials and Earth Sciences > Material Science 11 Department of Materials and Earth Sciences DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres DFG-Collaborative Research Centres (incl. Transregio) |
| Date Deposited: | 17 Sep 2012 12:25 |
| Official URL: | http://dx.doi.org/10.1103/PhysRevB.86.094105 |
| Additional Information: | SFB 595 B7 |
| Identification Number: | doi:10.1103/PhysRevB.86.094105 |
| Funders: | This work was supported by the German Science Foundation (DFG) within the collaborative research center SFB 595 (Electrical Fatigue of Functional Materials). |
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