Riedel, Ralf ; Zerr, Andreas ; Miehe, Gerhard ; Serghiou, George ; Schwarz, Marcus ; Kroke, Edwin ; Fueß, Hartmut ; Kroll, Peter ; Boehler, Reinhard (1999)
Synthesis of cubic silicon nitride.
In: Nature, 400 (6742)
doi: 10.1038/22493
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Silicon nitride (Si3N4) is used in a variety of important technological applications. The high fracture toughness, hardness and wear resistance of Si3N4-based ceramics are exploited in cutting tools and anti-friction bearings1; in electronic applications, Si3N4 is used as an insulating, masking and passivating material2. Two polymorphs of silicon nitride are known, both of hexagonal structure: alpha- and beta-Si3N4. Here we report the synthesis of a third polymorph of silicon nitride, which has a cubic spinel structure. This new phase, c-Si3N4, is formed at pressures above 15 GPa and temperatures exceeding 2,000 K, yet persists metastably in air at ambient pressure to at least 700 K. First-principles calculations of the properties of this phase suggest that the hardness of c-Si3N4 should be comparable to that of the hardest known oxide (stishovite3, a high-pressure phase of SiO2), and significantly greater than the hardness of the two hexagonal polymorphs.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 1999 |
| Autor(en): | Riedel, Ralf ; Zerr, Andreas ; Miehe, Gerhard ; Serghiou, George ; Schwarz, Marcus ; Kroke, Edwin ; Fueß, Hartmut ; Kroll, Peter ; Boehler, Reinhard |
| Art des Eintrags: | Bibliographie |
| Titel: | Synthesis of cubic silicon nitride |
| Sprache: | Englisch |
| Publikationsjahr: | 22 Juli 1999 |
| Verlag: | NPG |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Nature |
| Jahrgang/Volume einer Zeitschrift: | 400 |
| (Heft-)Nummer: | 6742 |
| DOI: | 10.1038/22493 |
| Kurzbeschreibung (Abstract): | Silicon nitride (Si3N4) is used in a variety of important technological applications. The high fracture toughness, hardness and wear resistance of Si3N4-based ceramics are exploited in cutting tools and anti-friction bearings1; in electronic applications, Si3N4 is used as an insulating, masking and passivating material2. Two polymorphs of silicon nitride are known, both of hexagonal structure: alpha- and beta-Si3N4. Here we report the synthesis of a third polymorph of silicon nitride, which has a cubic spinel structure. This new phase, c-Si3N4, is formed at pressures above 15 GPa and temperatures exceeding 2,000 K, yet persists metastably in air at ambient pressure to at least 700 K. First-principles calculations of the properties of this phase suggest that the hardness of c-Si3N4 should be comparable to that of the hardest known oxide (stishovite3, a high-pressure phase of SiO2), and significantly greater than the hardness of the two hexagonal polymorphs. |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Disperse Feststoffe 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Strukturforschung |
| Hinterlegungsdatum: | 08 Jun 2012 06:57 |
| Letzte Änderung: | 26 Aug 2018 21:27 |
| PPN: | |
| Sponsoren: | This work was supported by the Deutsche Forschungsgemeinschaft, Bonn, Germany, and the Fonds der Chemischen Industrie, Frankfurt, Germany. |
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