Ramakrishnan, P. A. ; Wang, Y. T. ; Balzar, D. ; An, Linan ; Haluschka, C. ; Riedel, R. ; Hermann, A. M. (2001)
Silicoboron–carbonitride ceramics: A class of high-temperature, dopable electronic materials.
In: Applied Physics Letters, 78 (20)
doi: 10.1063/1.1370540
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
The structure and electronic properties of polymer-derived silicoboron–carbonitride ceramics are reported. Structural analysis using radial-distribution-function formalism showed that the local structure is comprised of Si tetrahedra with B, C, and N at the corners. Boron doping of SiCN leads to enhanced p-type conductivity (0.1 –1 cm–1 at room temperature). The conductivity variation with temperature for both SiCN and SiBCN ceramics shows Mott's variable range hopping behavior in these materials, characteristic of a highly defective semiconductor. The SiBCN ceramic has a low, positive value of thermopower, which is probably due to a compensation mechanism.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2001 |
| Autor(en): | Ramakrishnan, P. A. ; Wang, Y. T. ; Balzar, D. ; An, Linan ; Haluschka, C. ; Riedel, R. ; Hermann, A. M. |
| Art des Eintrags: | Bibliographie |
| Titel: | Silicoboron–carbonitride ceramics: A class of high-temperature, dopable electronic materials |
| Sprache: | Englisch |
| Publikationsjahr: | 2001 |
| Verlag: | AIP |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Applied Physics Letters |
| Jahrgang/Volume einer Zeitschrift: | 78 |
| (Heft-)Nummer: | 20 |
| DOI: | 10.1063/1.1370540 |
| Kurzbeschreibung (Abstract): | The structure and electronic properties of polymer-derived silicoboron–carbonitride ceramics are reported. Structural analysis using radial-distribution-function formalism showed that the local structure is comprised of Si tetrahedra with B, C, and N at the corners. Boron doping of SiCN leads to enhanced p-type conductivity (0.1 –1 cm–1 at room temperature). The conductivity variation with temperature for both SiCN and SiBCN ceramics shows Mott's variable range hopping behavior in these materials, characteristic of a highly defective semiconductor. The SiBCN ceramic has a low, positive value of thermopower, which is probably due to a compensation mechanism. |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Disperse Feststoffe 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften |
| Hinterlegungsdatum: | 18 Mai 2012 08:19 |
| Letzte Änderung: | 05 Mär 2013 10:00 |
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