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{B[C2H4Si(CH3)NH]2[C2H4Si(CH3)N(SiH2Ph)]}n: The First Polyborosilazane Precursor for Silicoboron Carbonitride Stable to 2200 .DEG.C..

Wang, Zhi-Chang ; Gerstel, Peter ; Kaiser, Gerhard ; Kummer, Horst ; Bill, Joachim ; Aldinger, Fritz ; Riedel, Ralf (2001):
{B[C2H4Si(CH3)NH]2[C2H4Si(CH3)N(SiH2Ph)]}n: The First Polyborosilazane Precursor for Silicoboron Carbonitride Stable to 2200 .DEG.C..
In: Chemistry Letters, 30 (4), pp. 296-297. Komiyama Printing Co., Ltd, ISSN 03667022,
[Article]

Abstract

{B[C2H4Si(CH3)NH]2[C2H4Si(CH3)N(SiH2Ph)]}n was synthesized by base-catalyzed dehydrocoupling reaction of {B[C2H4Si(CH3)NH]3}n with phenylsilane. Pyrolysis of the new polyborosilazane precursor to 1050 °C gave an amorphous material Si3.9B1.0C11N3.2, which could resist thermal degradation to 2200 °C in argon.

Item Type: Article
Erschienen: 2001
Creators: Wang, Zhi-Chang ; Gerstel, Peter ; Kaiser, Gerhard ; Kummer, Horst ; Bill, Joachim ; Aldinger, Fritz ; Riedel, Ralf
Title: {B[C2H4Si(CH3)NH]2[C2H4Si(CH3)N(SiH2Ph)]}n: The First Polyborosilazane Precursor for Silicoboron Carbonitride Stable to 2200 .DEG.C..
Language: English
Abstract:

{B[C2H4Si(CH3)NH]2[C2H4Si(CH3)N(SiH2Ph)]}n was synthesized by base-catalyzed dehydrocoupling reaction of {B[C2H4Si(CH3)NH]3}n with phenylsilane. Pyrolysis of the new polyborosilazane precursor to 1050 °C gave an amorphous material Si3.9B1.0C11N3.2, which could resist thermal degradation to 2200 °C in argon.

Journal or Publication Title: Chemistry Letters
Journal volume: 30
Number: 4
Publisher: Komiyama Printing Co., Ltd
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Dispersive Solids
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 18 May 2012 08:19
Official URL: http://dx.doi.org/10.1246/cl.2001.296
Identification Number: doi:10.1246/cl.2001.296
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