Sahm, T. ; Gurlo, A. ; Bârsan, N. ; Weimar, U. (2006)
Properties of Indium Oxide Semiconducting Sensors Deposited by Different Techniques.
In: Particulate Science and Technology, 24 (4)
doi: 10.1080/02726350600934739
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Semiconducting In2O3 gas sensors have been fabricated by two different deposition techniques, i.e., spin-coating and screen-printing. In both cases the same starting material – sol-gel-prepared cubic In2O3 – was used for the deposition in order to ensure a better comparability of the different sensing layers. The morphology of the layers has been characterized using scanning electron microscopy (SEM) technique. The layers deposited by different methods show similar grain size and porosity. Furthermore, Dc electrical tests have been performed to analyze the sensing properties of the different gas sensors. Reducing gases (CO and propanal) as well as oxidizing gases (NO2 and ozone) were used as test gases in the background of dry and humidified synthetic air. All measurements were performed at several temperatures. It was found that the spin-coated and screen-printed layers show different sensing properties, i.e., screen-printed sensors showed higher sensor signals than spin-coated sensors for CO, propanal, and NO2. The most striking differences appeared in the detection of ozone. In this case, spin-coated sensors showed a higher performance than screen-printed sensors. Higher ozone concentrations led to saturation effects for the latter.
Typ des Eintrags: | Artikel |
---|---|
Erschienen: | 2006 |
Autor(en): | Sahm, T. ; Gurlo, A. ; Bârsan, N. ; Weimar, U. |
Art des Eintrags: | Bibliographie |
Titel: | Properties of Indium Oxide Semiconducting Sensors Deposited by Different Techniques |
Sprache: | Englisch |
Publikationsjahr: | 2006 |
Verlag: | Taylor & Francis |
Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Particulate Science and Technology |
Jahrgang/Volume einer Zeitschrift: | 24 |
(Heft-)Nummer: | 4 |
DOI: | 10.1080/02726350600934739 |
Kurzbeschreibung (Abstract): | Semiconducting In2O3 gas sensors have been fabricated by two different deposition techniques, i.e., spin-coating and screen-printing. In both cases the same starting material – sol-gel-prepared cubic In2O3 – was used for the deposition in order to ensure a better comparability of the different sensing layers. The morphology of the layers has been characterized using scanning electron microscopy (SEM) technique. The layers deposited by different methods show similar grain size and porosity. Furthermore, Dc electrical tests have been performed to analyze the sensing properties of the different gas sensors. Reducing gases (CO and propanal) as well as oxidizing gases (NO2 and ozone) were used as test gases in the background of dry and humidified synthetic air. All measurements were performed at several temperatures. It was found that the spin-coated and screen-printed layers show different sensing properties, i.e., screen-printed sensors showed higher sensor signals than spin-coated sensors for CO, propanal, and NO2. The most striking differences appeared in the detection of ozone. In this case, spin-coated sensors showed a higher performance than screen-printed sensors. Higher ozone concentrations led to saturation effects for the latter. |
Freie Schlagworte: | charge transfer model, deposition techniques, gas sensors, indium oxide, reducing and oxidizing gases, semiconductor |
Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Disperse Feststoffe 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften |
Hinterlegungsdatum: | 20 Apr 2012 08:32 |
Letzte Änderung: | 05 Mär 2013 10:00 |
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