Gurlo, Aleksander ; Dzivenko, Dmytro ; Andrade, Miria ; Riedel, Ralf ; Lauterbach, Stefan ; Kleebe, Hans-Joachim (2010)
Pressure-Induced Decomposition of Indium Hydroxide.
In: Journal of the American Chemical Society, 132 (36)
doi: 10.1021/ja104278p
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
A static pressure-induced decomposition of indium hydroxide into metallic indium that takes place at ambient temperature is reported. The lattice parameter of c-In(OH)3 decreased upon compression from 7.977(2) to 7.45 Å at 34 GPa, corresponding to a decrease in specific volume of 18%. Fitting the second-order Birch−Murnaghan equation of state to the obtained compression data gave a bulk modulus of 99 ± 3 GPa for c-In(OH)3. The c-In(OH)3 crystals with a size of 100 nm are comminuted upon compression, as indicated by the grain-size reduction reflected in broadening of the diffraction reflections and the appearance of smaller (5 nm) incoherently oriented domains in TEM. The rapid decompression of compressed c-In(OH)3 leads to partial decomposition of indium hydroxide into metallic indium, mainly as a result of localized stress gradients caused by relaxation of the highly disordered indium sublattice in indium hydroxide. This partial decomposition of indium hydroxide into metallic indium is irreversible, as confirmed by angle-dispersive X-ray diffraction, transmission electron microscopy imaging, Raman scattering, and FTIR spectroscopy. Recovered c-In(OH)3 samples become completely black and nontransparent and show typical features of metals, i.e., a falling absorption in the 100−250 cm−1 region accompanied by a featureless spectrum in the 250−2500 cm−1 region in the Raman spectrum and Drude-like absorption of free electrons in the region of 4000−8000 cm−1 in the FTIR spectrum. These features were not observed in the initial c-In(OH)3, which is a typical white wide-band-gap semiconductor.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2010 |
| Autor(en): | Gurlo, Aleksander ; Dzivenko, Dmytro ; Andrade, Miria ; Riedel, Ralf ; Lauterbach, Stefan ; Kleebe, Hans-Joachim |
| Art des Eintrags: | Bibliographie |
| Titel: | Pressure-Induced Decomposition of Indium Hydroxide |
| Sprache: | Englisch |
| Publikationsjahr: | 23 August 2010 |
| Verlag: | ACS |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Journal of the American Chemical Society |
| Jahrgang/Volume einer Zeitschrift: | 132 |
| (Heft-)Nummer: | 36 |
| DOI: | 10.1021/ja104278p |
| Kurzbeschreibung (Abstract): | A static pressure-induced decomposition of indium hydroxide into metallic indium that takes place at ambient temperature is reported. The lattice parameter of c-In(OH)3 decreased upon compression from 7.977(2) to 7.45 Å at 34 GPa, corresponding to a decrease in specific volume of 18%. Fitting the second-order Birch−Murnaghan equation of state to the obtained compression data gave a bulk modulus of 99 ± 3 GPa for c-In(OH)3. The c-In(OH)3 crystals with a size of 100 nm are comminuted upon compression, as indicated by the grain-size reduction reflected in broadening of the diffraction reflections and the appearance of smaller (5 nm) incoherently oriented domains in TEM. The rapid decompression of compressed c-In(OH)3 leads to partial decomposition of indium hydroxide into metallic indium, mainly as a result of localized stress gradients caused by relaxation of the highly disordered indium sublattice in indium hydroxide. This partial decomposition of indium hydroxide into metallic indium is irreversible, as confirmed by angle-dispersive X-ray diffraction, transmission electron microscopy imaging, Raman scattering, and FTIR spectroscopy. Recovered c-In(OH)3 samples become completely black and nontransparent and show typical features of metals, i.e., a falling absorption in the 100−250 cm−1 region accompanied by a featureless spectrum in the 250−2500 cm−1 region in the Raman spectrum and Drude-like absorption of free electrons in the region of 4000−8000 cm−1 in the FTIR spectrum. These features were not observed in the initial c-In(OH)3, which is a typical white wide-band-gap semiconductor. |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Geowissenschaften > Fachgebiet Geomaterialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Disperse Feststoffe |
| Hinterlegungsdatum: | 05 Apr 2012 09:16 |
| Letzte Änderung: | 13 Aug 2021 08:31 |
| PPN: | |
| Sponsoren: | The experiments were performed within the framework of Project “Indium Oxide (In2O3) under High Pressure: Rational Design of New Polymorphs and Characterization of Their Physico-Chemical Properties” of the DFG Priority Programme 1236 “Oxides, Carbides, an, The financial support by DESY (Hamburg, Germany; Proposal I-20080181) is gratefully acknowledged., The financial support by ESRF (Grenoble, France) is gratefully acknowledged. |
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