Radetinac, Aldin ; Takahashi, Kei S. ; Alff, Lambert ; Kawasaki, Masashi ; Tokura, Yoshinori (2010)
Single-Crystalline CaMoO3and SrMoO3Films Grown by Pulsed Laser Deposition in a Reductive Atmosphere.
In: Applied Physics Express, 3 (7)
doi: 10.1143/APEX.3.073003
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Single-crystalline thin films of CaMoO3 and SrMoO3 with a Mo4+ state perovskite structure have been epitaxially grown by pulsed-laser deposition from Mo6+ state ceramic targets. Phase-pure films were obtained on nearly lattice-matched perovskite substrates using argon gas flow during the deposition. Transport properties of the films are consistent with those of paramagnetic and metallic phases, whereas the residual resistivities are far lower than those reported previously for films and bulk polycrystals. These results indicate that this growth method can be useful for exploring the interfaces and junction properties of 4d and 5d transition metal oxides that are unstable in a conventional oxidative atmosphere.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2010 |
| Autor(en): | Radetinac, Aldin ; Takahashi, Kei S. ; Alff, Lambert ; Kawasaki, Masashi ; Tokura, Yoshinori |
| Art des Eintrags: | Bibliographie |
| Titel: | Single-Crystalline CaMoO3and SrMoO3Films Grown by Pulsed Laser Deposition in a Reductive Atmosphere |
| Sprache: | Englisch |
| Publikationsjahr: | 29 Mai 2010 |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Applied Physics Express |
| Jahrgang/Volume einer Zeitschrift: | 3 |
| (Heft-)Nummer: | 7 |
| DOI: | 10.1143/APEX.3.073003 |
| Kurzbeschreibung (Abstract): | Single-crystalline thin films of CaMoO3 and SrMoO3 with a Mo4+ state perovskite structure have been epitaxially grown by pulsed-laser deposition from Mo6+ state ceramic targets. Phase-pure films were obtained on nearly lattice-matched perovskite substrates using argon gas flow during the deposition. Transport properties of the films are consistent with those of paramagnetic and metallic phases, whereas the residual resistivities are far lower than those reported previously for films and bulk polycrystals. These results indicate that this growth method can be useful for exploring the interfaces and junction properties of 4d and 5d transition metal oxides that are unstable in a conventional oxidative atmosphere. |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Dünne Schichten 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften |
| Hinterlegungsdatum: | 30 Mär 2012 08:43 |
| Letzte Änderung: | 05 Mär 2013 10:00 |
| PPN: | |
| Sponsoren: | Japan Society for the Promotion of Sciene |
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