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Diffusion based degradation mechanisms in giant magnetoresistive spin valves

Hawraneck, Matthias and Zimmer, Jürgen and Raberg, Wolfgang and Prügl, Klemens and Schmitt, Stephan and Bever, Thomas and Flege, Stefan and Alff, Lambert :
Diffusion based degradation mechanisms in giant magnetoresistive spin valves.
[Online-Edition: http://dx.doi.org/10.1063/1.2956394]
In: Applied Physics Letters, 93 (1) 012504. ISSN 00036951
[Article] , (2008)

Official URL: http://dx.doi.org/10.1063/1.2956394

Abstract

Spin valve systems based on the giant magnetoresistive effect as used, for example, in hard disks and automotive applications consist of several functional metallic thin film layers. We have identified by secondary ion mass spectrometry two main degradation mechanisms: one is related to oxygen diffusion through a protective cap layer and the other one is interdiffusion directly at the functional layers of the giant magnetoresistive stack. By choosing a suitable material as cap layer (TaN), the oxidation effect can be suppressed.

Item Type: Article
Erschienen: 2008
Creators: Hawraneck, Matthias and Zimmer, Jürgen and Raberg, Wolfgang and Prügl, Klemens and Schmitt, Stephan and Bever, Thomas and Flege, Stefan and Alff, Lambert
Title: Diffusion based degradation mechanisms in giant magnetoresistive spin valves
Language: English
Abstract:

Spin valve systems based on the giant magnetoresistive effect as used, for example, in hard disks and automotive applications consist of several functional metallic thin film layers. We have identified by secondary ion mass spectrometry two main degradation mechanisms: one is related to oxygen diffusion through a protective cap layer and the other one is interdiffusion directly at the functional layers of the giant magnetoresistive stack. By choosing a suitable material as cap layer (TaN), the oxidation effect can be suppressed.

Journal or Publication Title: Applied Physics Letters
Volume: 93
Number: 1
Publisher: American Institute of Physics
Uncontrolled Keywords: chemical interdiffusion, magnetic thin films, magnetoresistance, metallic thin films, oxidation, secondary ion mass spectra, spin valves, tantalum, tantalum compounds
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Advanced Thin Film Technology
11 Department of Materials and Earth Sciences > Material Science > Material Analytics
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 29 Mar 2012 10:56
Official URL: http://dx.doi.org/10.1063/1.2956394
Identification Number: doi:10.1063/1.2956394
Funders: This work was supported by the BMBF Project No. 13N9084.
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