TU Darmstadt / ULB / TUbiblio

Stacking-fault nucleation on {I}r(111)

Busse, C. and Polop, C. and Muller, M. and Albe, K. and Linke, U. and Michely, T. (2003):
Stacking-fault nucleation on {I}r(111).
In: Phys. Rev. Lett., American Physical Society, pp. 56103-1, 91, (5), [Online-Edition: http://prl.aps.org/abstract/PRL/v91/i5/e056103],
[Article]

Abstract

Variable temperature scanning tunneling microscopy experiments reveal that in Ir(111) homoepitaxy islands nucleate and grow both in the regular fcc stacking and in the faulted hcp stacking. Analysis of this effect in dependence on deposition temperature leads to an atomistic model of stacking-fault formation: The large, metastable stacking-fault islands grow by sufficiently fast addition of adatoms to small mobile adatom clusters which occupy in thermal equilibrium the hcp sites with a significant probability. Using parameters derived independently by field ion microscopy, the model accurately describes the results for Ir(111) and is expected to be valid also for other surfaces.

Item Type: Article
Erschienen: 2003
Creators: Busse, C. and Polop, C. and Muller, M. and Albe, K. and Linke, U. and Michely, T.
Title: Stacking-fault nucleation on {I}r(111)
Language: English
Abstract:

Variable temperature scanning tunneling microscopy experiments reveal that in Ir(111) homoepitaxy islands nucleate and grow both in the regular fcc stacking and in the faulted hcp stacking. Analysis of this effect in dependence on deposition temperature leads to an atomistic model of stacking-fault formation: The large, metastable stacking-fault islands grow by sufficiently fast addition of adatoms to small mobile adatom clusters which occupy in thermal equilibrium the hcp sites with a significant probability. Using parameters derived independently by field ion microscopy, the model accurately describes the results for Ir(111) and is expected to be valid also for other surfaces.

Journal or Publication Title: Phys. Rev. Lett.
Volume: 91
Number: 5
Publisher: American Physical Society
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Materials Modelling
Date Deposited: 28 Feb 2012 15:20
Official URL: http://prl.aps.org/abstract/PRL/v91/i5/e056103
Identification Number: doi:10.1103/PhysRevLett.91.056103
Funders: This work was supported by the Deutsche Forschungsgemeinschaft via the project ‘‘Atomare Prozesse beim homoepitaktischen Schichtwachstum unter extremen Nichtgleichgewichtsbedingungen.’’
Export:
Suche nach Titel in: TUfind oder in Google

Optionen (nur für Redakteure)

View Item View Item