Busse, C. ; Polop, C. ; Muller, M. ; Albe, K. ; Linke, U. ; Michely, T. (2003)
Stacking-fault nucleation on {I}r(111).
In: Phys. Rev. Lett., 91 (5)
doi: 10.1103/PhysRevLett.91.056103
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Variable temperature scanning tunneling microscopy experiments reveal that in Ir(111) homoepitaxy islands nucleate and grow both in the regular fcc stacking and in the faulted hcp stacking. Analysis of this effect in dependence on deposition temperature leads to an atomistic model of stacking-fault formation: The large, metastable stacking-fault islands grow by sufficiently fast addition of adatoms to small mobile adatom clusters which occupy in thermal equilibrium the hcp sites with a significant probability. Using parameters derived independently by field ion microscopy, the model accurately describes the results for Ir(111) and is expected to be valid also for other surfaces.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2003 |
| Autor(en): | Busse, C. ; Polop, C. ; Muller, M. ; Albe, K. ; Linke, U. ; Michely, T. |
| Art des Eintrags: | Bibliographie |
| Titel: | Stacking-fault nucleation on {I}r(111) |
| Sprache: | Englisch |
| Publikationsjahr: | 31 Juli 2003 |
| Verlag: | American Physical Society |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Phys. Rev. Lett. |
| Jahrgang/Volume einer Zeitschrift: | 91 |
| (Heft-)Nummer: | 5 |
| DOI: | 10.1103/PhysRevLett.91.056103 |
| URL / URN: | http://prl.aps.org/abstract/PRL/v91/i5/e056103 |
| Kurzbeschreibung (Abstract): | Variable temperature scanning tunneling microscopy experiments reveal that in Ir(111) homoepitaxy islands nucleate and grow both in the regular fcc stacking and in the faulted hcp stacking. Analysis of this effect in dependence on deposition temperature leads to an atomistic model of stacking-fault formation: The large, metastable stacking-fault islands grow by sufficiently fast addition of adatoms to small mobile adatom clusters which occupy in thermal equilibrium the hcp sites with a significant probability. Using parameters derived independently by field ion microscopy, the model accurately describes the results for Ir(111) and is expected to be valid also for other surfaces. |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Materialmodellierung |
| Hinterlegungsdatum: | 28 Feb 2012 15:20 |
| Letzte Änderung: | 18 Jul 2018 13:43 |
| PPN: | |
| Sponsoren: | This work was supported by the Deutsche Forschungsgemeinschaft via the project ‘‘Atomare Prozesse beim homoepitaktischen Schichtwachstum unter extremen Nichtgleichgewichtsbedingungen.’’ |
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