Voegeli, W. ; Albe, K. ; Hahn, H. (2003)
Simulation of grain growth in nanocrystalline nickel induced by ion irradiation.
In: Nucl. Instr. Meth. B, 202
doi: 10.1016/S0168-583X(02)01862-1
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Molecular dynamics simulations of 5 keV cascades in nanocrystalline nickel with grain sizes of 5 and 10 nm are presented. If the spike volume is exceeding the grain size or overlapping the grain boundary (GB) area we observe ionbeam induced grain growth for both grain sizes. In contrast cascades located in the grain volume lead to the formation of vacancies and interstitials, where the latter are mostly accommodated by the GBs upon annealing. Finally, we show that ion-beam induced grain growth is a direct result of recrystallisation of the thermal spike and therefore inherently different to grain growth observed in long time thermal annealing simulations. (C) 2002 Elsevier Science B.V. All rights reserved.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2003 |
| Autor(en): | Voegeli, W. ; Albe, K. ; Hahn, H. |
| Art des Eintrags: | Bibliographie |
| Titel: | Simulation of grain growth in nanocrystalline nickel induced by ion irradiation |
| Sprache: | Englisch |
| Publikationsjahr: | April 2003 |
| Verlag: | Elsevier |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Nucl. Instr. Meth. B |
| Jahrgang/Volume einer Zeitschrift: | 202 |
| DOI: | 10.1016/S0168-583X(02)01862-1 |
| URL / URN: | http://www.sciencedirect.com/science/article/pii/S0168583X02... |
| Zugehörige Links: | |
| Kurzbeschreibung (Abstract): | Molecular dynamics simulations of 5 keV cascades in nanocrystalline nickel with grain sizes of 5 and 10 nm are presented. If the spike volume is exceeding the grain size or overlapping the grain boundary (GB) area we observe ionbeam induced grain growth for both grain sizes. In contrast cascades located in the grain volume lead to the formation of vacancies and interstitials, where the latter are mostly accommodated by the GBs upon annealing. Finally, we show that ion-beam induced grain growth is a direct result of recrystallisation of the thermal spike and therefore inherently different to grain growth observed in long time thermal annealing simulations. (C) 2002 Elsevier Science B.V. All rights reserved. |
| Freie Schlagworte: | Radiation damage; Nanocrystalline materials; Molecular dynamics |
| Zusätzliche Informationen: | 6th International Conference on Computer Simulation of Radiation Effects in Solids |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Materialmodellierung 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Gemeinschaftslabor Nanomaterialien |
| Hinterlegungsdatum: | 22 Feb 2012 16:22 |
| Letzte Änderung: | 31 Okt 2018 14:55 |
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