Nord, J. ; Nordlund, K. ; Keinonen, J. ; Albe, K. (2003)
Molecular dynamics study of defect formation in GaN cascades.
In: Nucl. Instr. Meth. B, 202
doi: 10.1016/S0168-583X(02)01839-6
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Simulations of irradiation effects in compound semiconductors require interatomic potentials which describe not only the compound phases, but also the pure constituents and defects. We discuss a systematic approach based on the analytic bond-order scheme for constructing such potentials and give an example for GaN. Finally, this potential is employed for simulations of defect formation in GaN by ion irradiation for recoils in the 200 eV to 10 keV energy range. Results on the total damage production are presented and compared with other semiconductors and experiments. (C) 2002 Elsevier Science B.V. All rights reserved.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2003 |
| Autor(en): | Nord, J. ; Nordlund, K. ; Keinonen, J. ; Albe, K. |
| Art des Eintrags: | Bibliographie |
| Titel: | Molecular dynamics study of defect formation in GaN cascades |
| Sprache: | Englisch |
| Publikationsjahr: | April 2003 |
| Verlag: | Elsevier Science Publishing Company |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Nucl. Instr. Meth. B |
| Jahrgang/Volume einer Zeitschrift: | 202 |
| DOI: | 10.1016/S0168-583X(02)01839-6 |
| URL / URN: | http://www.sciencedirect.com/science/article/pii/S0168583X02... |
| Zugehörige Links: | |
| Kurzbeschreibung (Abstract): | Simulations of irradiation effects in compound semiconductors require interatomic potentials which describe not only the compound phases, but also the pure constituents and defects. We discuss a systematic approach based on the analytic bond-order scheme for constructing such potentials and give an example for GaN. Finally, this potential is employed for simulations of defect formation in GaN by ion irradiation for recoils in the 200 eV to 10 keV energy range. Results on the total damage production are presented and compared with other semiconductors and experiments. (C) 2002 Elsevier Science B.V. All rights reserved. |
| Freie Schlagworte: | Irradiation. Defects, Semiconductors, GaN |
| Zusätzliche Informationen: | 6th International Conference on Computer Simulation of Radiation Effects in Solids |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Materialmodellierung 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften |
| Hinterlegungsdatum: | 22 Feb 2012 10:55 |
| Letzte Änderung: | 05 Mär 2013 09:58 |
| PPN: | |
| Sponsoren: | The research was supported by the Academy of Finland under project Nos. 44215 and 73722., Additional travel fundings of the DAAD and the Academy of Finland as well as Grants for computer time from the Center for Scientific Computing in Espoo, Finland are gratefully acknowledged. |
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