TU Darmstadt / ULB / TUbiblio

Void formation in melt-grown silicon studied by molecular dynamics simulations: From grown-in faulted dislocation loops to vacancy clusters

Pohl, Johan and Albe, Karsten (2011):
Void formation in melt-grown silicon studied by molecular dynamics simulations: From grown-in faulted dislocation loops to vacancy clusters.
In: App. Phys. Lett., American Institute of Physics, pp. 081910, 99, (8), [Online-Edition: http://apl.aip.org/resource/1/applab/v99/i8/p081910_s1],
[Article]

Abstract

Molecular dynamics simulations of a dislocation based mechanism for void formation in silicon are presented. By studying a moving solid-liquid interface in Si, we observe the formation of dislocation loops on (111) facets consisting of coherency and anticoherency dislocations, which disband within nanoseconds into vacancy clusters of 10 or more vacancies. These vacancy clusters can act as nucleation seeds for the experimentally observed octahedral single and double voids.

Item Type: Article
Erschienen: 2011
Creators: Pohl, Johan and Albe, Karsten
Title: Void formation in melt-grown silicon studied by molecular dynamics simulations: From grown-in faulted dislocation loops to vacancy clusters
Language: English
Abstract:

Molecular dynamics simulations of a dislocation based mechanism for void formation in silicon are presented. By studying a moving solid-liquid interface in Si, we observe the formation of dislocation loops on (111) facets consisting of coherency and anticoherency dislocations, which disband within nanoseconds into vacancy clusters of 10 or more vacancies. These vacancy clusters can act as nucleation seeds for the experimentally observed octahedral single and double voids.

Journal or Publication Title: App. Phys. Lett.
Volume: 99
Number: 8
Publisher: American Institute of Physics
Uncontrolled Keywords: dislocation loops, elemental semiconductors, molecular dynamics method, nucleation, silicon, vacancies (crystal), voids (solid)
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Materials Modelling
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 634: Nuclear Structure, Nuclear Astrophysics and Fundamental Experiments at Low Momentum Transfer at the Superconducting Darmstadt Accelerator (S-DALINAC)
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 634: Nuclear Structure, Nuclear Astrophysics and Fundamental Experiments at Low Momentum Transfer at the Superconducting Darmstadt Accelerator (S-DALINAC) > C: Fundamentale Experimente
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 634: Nuclear Structure, Nuclear Astrophysics and Fundamental Experiments at Low Momentum Transfer at the Superconducting Darmstadt Accelerator (S-DALINAC) > C: Fundamentale Experimente > C2: Elektronstreuung an Wenig-Nukleonen-Systemen
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Zentrale Einrichtungen
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres
DFG-Collaborative Research Centres (incl. Transregio)
Date Deposited: 22 Feb 2012 10:59
Official URL: http://apl.aip.org/resource/1/applab/v99/i8/p081910_s1
Identification Number: doi:10.1063/1.3630028
Related URLs:
Funders: Financial support by BMBF through Grant No. 0329717C is acknowledged., We also thank HHLR at TU Darmstadt and FZ Jülich for computing time.
Export:
Suche nach Titel in: TUfind oder in Google

Optionen (nur für Redakteure)

View Item View Item