Paul, F. ; Giere, A. ; Menesklou, W. ; Binder, J. R. ; Scheele, P. ; Jakoby, Rolf ; Haußelt, J. (2008)
Influence of Fe-F-co-doping on the dielectric properties of Ba0.6Sr0.4TiO3 thick-films.
In: International Journal of Materials Research, 99
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
The influence of Fe acceptor and Fe?F acceptor?donor co-doping on the dielectric response of screen-printed Ba0.6Sr0.4TiO3 thick-films on alumina substrates has been investigated. The Ba0.6Sr0.4TiO3 powders were synthesized by freeze-drying of sols. Permittivity dielectric loss, and tunability were investigated at kHz frequencies with a planar metal-insulator-metal capacitor structure, and at GHz frequencies up to 40 GHz using coplanar waveguide structures. Pure acceptor doping by Fe was found to have a distinct influence on permittivity and dielectric loss-factor at kHz-frequencies and at GHz frequencies due to an internal bias field and pairs of associated defects. Co-doping with F significantly suppresses the influence of the internal bias field and defect-associates at low and microwave frequencies. The commutation quality factor at 10 GHz and E eff
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2008 |
| Autor(en): | Paul, F. ; Giere, A. ; Menesklou, W. ; Binder, J. R. ; Scheele, P. ; Jakoby, Rolf ; Haußelt, J. |
| Art des Eintrags: | Bibliographie |
| Titel: | Influence of Fe-F-co-doping on the dielectric properties of Ba0.6Sr0.4TiO3 thick-films |
| Sprache: | Englisch |
| Publikationsjahr: | Oktober 2008 |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | International Journal of Materials Research |
| Jahrgang/Volume einer Zeitschrift: | 99 |
| Kurzbeschreibung (Abstract): | The influence of Fe acceptor and Fe?F acceptor?donor co-doping on the dielectric response of screen-printed Ba0.6Sr0.4TiO3 thick-films on alumina substrates has been investigated. The Ba0.6Sr0.4TiO3 powders were synthesized by freeze-drying of sols. Permittivity dielectric loss, and tunability were investigated at kHz frequencies with a planar metal-insulator-metal capacitor structure, and at GHz frequencies up to 40 GHz using coplanar waveguide structures. Pure acceptor doping by Fe was found to have a distinct influence on permittivity and dielectric loss-factor at kHz-frequencies and at GHz frequencies due to an internal bias field and pairs of associated defects. Co-doping with F significantly suppresses the influence of the internal bias field and defect-associates at low and microwave frequencies. The commutation quality factor at 10 GHz and E eff |
| Fachbereich(e)/-gebiet(e): | 18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP) > Mikrowellentechnik 18 Fachbereich Elektrotechnik und Informationstechnik 18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP) |
| Hinterlegungsdatum: | 27 Jan 2012 15:19 |
| Letzte Änderung: | 05 Mär 2013 09:58 |
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