Flege, Stefan ; Baba, Koumei ; Hatada, Ruriko ; Ensinger, Wolfgang (2011)
Methane plasma-based ion implantation of metallic and galvanically oxidized tantalum.
In: Surface and Coatings Technology, 206 (5)
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Tantalum and oxidized tantalum exhibit distinct differences when treated with plasma-based ion implantation of methane with − 20 kV. The implantation profiles of carbon are similar, but carbides are formed in the case of tantalum, as verified with X-ray diffraction and X-ray photoelectron spectrometry in combination with depth profiling, whereas there is no detectable carbide in the tantalum oxide film. The distributions of the co-implanted hydrogen also vary in that the intensity in depth profiling with secondary ion mass spectrometry does steadily decrease in the oxidized Ta, while in the metallic Ta it shows a short indentation below the surface and then decreases only very slowly.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2011 |
| Autor(en): | Flege, Stefan ; Baba, Koumei ; Hatada, Ruriko ; Ensinger, Wolfgang |
| Art des Eintrags: | Bibliographie |
| Titel: | Methane plasma-based ion implantation of metallic and galvanically oxidized tantalum |
| Sprache: | Englisch |
| Publikationsjahr: | 25 November 2011 |
| Verlag: | Elsevier Science Publishing Company |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Surface and Coatings Technology |
| Jahrgang/Volume einer Zeitschrift: | 206 |
| (Heft-)Nummer: | 5 |
| URL / URN: | http://www.sciencedirect.com/science/article/pii/S0257897211... |
| Kurzbeschreibung (Abstract): | Tantalum and oxidized tantalum exhibit distinct differences when treated with plasma-based ion implantation of methane with − 20 kV. The implantation profiles of carbon are similar, but carbides are formed in the case of tantalum, as verified with X-ray diffraction and X-ray photoelectron spectrometry in combination with depth profiling, whereas there is no detectable carbide in the tantalum oxide film. The distributions of the co-implanted hydrogen also vary in that the intensity in depth profiling with secondary ion mass spectrometry does steadily decrease in the oxidized Ta, while in the metallic Ta it shows a short indentation below the surface and then decreases only very slowly. |
| Freie Schlagworte: | Carbide, Methane plasma, Plasma based ion implantation, Secondary ion mass spectrometry, Tantalum |
| Zusätzliche Informationen: | Surface Modification of Materials by Ion beams 2009 — SMMIB 2009 Proceedings of the 16th International Conference on Surface Modification of Materials by Ion Beams |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Materialanalytik 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften |
| Hinterlegungsdatum: | 18 Nov 2011 13:43 |
| Letzte Änderung: | 05 Mär 2013 09:55 |
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