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Influence of Structural and Dielectric Anisotropy on the Dielectrophoresis of Single-Walled Carbon Nanotubes

Blatt, Sabine ; Hennrich, Frank ; Löhneysen, Hilbert v. ; Kappes, Manfred M. ; Vijayaraghavan, Aravind ; Krupke, Ralph (2007)
Influence of Structural and Dielectric Anisotropy on the Dielectrophoresis of Single-Walled Carbon Nanotubes.
In: Nano Letters, 7 (7)
doi: 10.1021/nl0706751
Artikel, Bibliographie

Kurzbeschreibung (Abstract)

We report on a carbon nanotube network which is composed of aligned metallic and randomly oriented semiconducting single-walled carbon nanotubes. The material is formed by using a novel radio frequency dielectrophoresis setup, which generates very large dielectrophoretic force fields and allows dielectrophoretic assembling of nanotube films up to 100 nm thickness. Polarization dependent absorption measurements provide experimental evidence for the electronic type specific alignment behavior. We explain the experimental data with an advanced model for nanotube dielectrophoresis, which explicitly takes into account both the longitudinal and transversal polarizability. On the basis of this model, we calculate the dielectrophoretic force fields and show that semiconducting nanotubes deposit under very large fields due to their transversal polarizability even for high field frequencies.

Typ des Eintrags: Artikel
Erschienen: 2007
Autor(en): Blatt, Sabine ; Hennrich, Frank ; Löhneysen, Hilbert v. ; Kappes, Manfred M. ; Vijayaraghavan, Aravind ; Krupke, Ralph
Art des Eintrags: Bibliographie
Titel: Influence of Structural and Dielectric Anisotropy on the Dielectrophoresis of Single-Walled Carbon Nanotubes
Sprache: Englisch
Publikationsjahr: 19 Juni 2007
Titel der Zeitschrift, Zeitung oder Schriftenreihe: Nano Letters
Jahrgang/Volume einer Zeitschrift: 7
(Heft-)Nummer: 7
DOI: 10.1021/nl0706751
Kurzbeschreibung (Abstract):

We report on a carbon nanotube network which is composed of aligned metallic and randomly oriented semiconducting single-walled carbon nanotubes. The material is formed by using a novel radio frequency dielectrophoresis setup, which generates very large dielectrophoretic force fields and allows dielectrophoretic assembling of nanotube films up to 100 nm thickness. Polarization dependent absorption measurements provide experimental evidence for the electronic type specific alignment behavior. We explain the experimental data with an advanced model for nanotube dielectrophoresis, which explicitly takes into account both the longitudinal and transversal polarizability. On the basis of this model, we calculate the dielectrophoretic force fields and show that semiconducting nanotubes deposit under very large fields due to their transversal polarizability even for high field frequencies.

Fachbereich(e)/-gebiet(e): 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Molekulare Nanostrukturen
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft
11 Fachbereich Material- und Geowissenschaften
Hinterlegungsdatum: 08 Nov 2011 12:45
Letzte Änderung: 05 Mär 2013 09:55
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