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Influence of Structural and Dielectric Anisotropy on the Dielectrophoresis of Single-Walled Carbon Nanotubes

Blatt, Sabine and Hennrich, Frank and Löhneysen, Hilbert v. and Kappes, Manfred M. and Vijayaraghavan, Aravind and Krupke, Ralph (2007):
Influence of Structural and Dielectric Anisotropy on the Dielectrophoresis of Single-Walled Carbon Nanotubes.
In: Nano Letters, 7 (7), pp. 1960-1966, ISSN 1530-6984,
[Online-Edition: http://dx.doi.org/10.1021/nl0706751],
[Article]

Abstract

We report on a carbon nanotube network which is composed of aligned metallic and randomly oriented semiconducting single-walled carbon nanotubes. The material is formed by using a novel radio frequency dielectrophoresis setup, which generates very large dielectrophoretic force fields and allows dielectrophoretic assembling of nanotube films up to 100 nm thickness. Polarization dependent absorption measurements provide experimental evidence for the electronic type specific alignment behavior. We explain the experimental data with an advanced model for nanotube dielectrophoresis, which explicitly takes into account both the longitudinal and transversal polarizability. On the basis of this model, we calculate the dielectrophoretic force fields and show that semiconducting nanotubes deposit under very large fields due to their transversal polarizability even for high field frequencies.

Item Type: Article
Erschienen: 2007
Creators: Blatt, Sabine and Hennrich, Frank and Löhneysen, Hilbert v. and Kappes, Manfred M. and Vijayaraghavan, Aravind and Krupke, Ralph
Title: Influence of Structural and Dielectric Anisotropy on the Dielectrophoresis of Single-Walled Carbon Nanotubes
Language: English
Abstract:

We report on a carbon nanotube network which is composed of aligned metallic and randomly oriented semiconducting single-walled carbon nanotubes. The material is formed by using a novel radio frequency dielectrophoresis setup, which generates very large dielectrophoretic force fields and allows dielectrophoretic assembling of nanotube films up to 100 nm thickness. Polarization dependent absorption measurements provide experimental evidence for the electronic type specific alignment behavior. We explain the experimental data with an advanced model for nanotube dielectrophoresis, which explicitly takes into account both the longitudinal and transversal polarizability. On the basis of this model, we calculate the dielectrophoretic force fields and show that semiconducting nanotubes deposit under very large fields due to their transversal polarizability even for high field frequencies.

Journal or Publication Title: Nano Letters
Volume: 7
Number: 7
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Fachgebiet Molekulare Nanostrukturen
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 08 Nov 2011 12:45
Official URL: http://dx.doi.org/10.1021/nl0706751
Identification Number: doi:10.1021/nl0706751
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