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Reversible Metal−Insulator Transitions in Metallic Single-Walled Carbon Nanotubes

Marquardt, Christoph W. and Dehm, Simone and Vijayaraghavan, Aravind and Blatt, Sabine and Hennrich, Frank and Krupke, Ralph (2008):
Reversible Metal−Insulator Transitions in Metallic Single-Walled Carbon Nanotubes.
In: Nano Letters, 8 (9), pp. 2767-2772, ISSN 1530-6984,
[Online-Edition: http://dx.doi.org/10.1021/nl801288d],
[Article]

Abstract

We report on reversible metal to insulator transitions in metallic single-walled carbon nanotube devices induced by repeated electron irradiation of a nanotube segment. The transition from a low-resistive, metallic state to a high-resistive, insulating state by 3 orders of magnitude was monitored by electron transport measurements. Application of a large voltage bias leads to a transition back to the original metallic state. Both states are stable in time, and transitions are fully reversible and reproducible. The data is evidence for a local perturbation of the nanotube electronic system by removable trapped charges in the underneath substrate and excludes structural damage of the nanotube. The result has implications for using electron-beam lithography in nanotube device fabrication.

Item Type: Article
Erschienen: 2008
Creators: Marquardt, Christoph W. and Dehm, Simone and Vijayaraghavan, Aravind and Blatt, Sabine and Hennrich, Frank and Krupke, Ralph
Title: Reversible Metal−Insulator Transitions in Metallic Single-Walled Carbon Nanotubes
Language: English
Abstract:

We report on reversible metal to insulator transitions in metallic single-walled carbon nanotube devices induced by repeated electron irradiation of a nanotube segment. The transition from a low-resistive, metallic state to a high-resistive, insulating state by 3 orders of magnitude was monitored by electron transport measurements. Application of a large voltage bias leads to a transition back to the original metallic state. Both states are stable in time, and transitions are fully reversible and reproducible. The data is evidence for a local perturbation of the nanotube electronic system by removable trapped charges in the underneath substrate and excludes structural damage of the nanotube. The result has implications for using electron-beam lithography in nanotube device fabrication.

Journal or Publication Title: Nano Letters
Volume: 8
Number: 9
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Fachgebiet Molekulare Nanostrukturen
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 08 Nov 2011 12:40
Official URL: http://dx.doi.org/10.1021/nl801288d
Identification Number: doi:10.1021/nl801288d
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