Marquardt, Christoph W. ; Dehm, Simone ; Vijayaraghavan, Aravind ; Blatt, Sabine ; Hennrich, Frank ; Krupke, Ralph (2008)
Reversible Metal−Insulator Transitions in Metallic Single-Walled Carbon Nanotubes.
In: Nano Letters, 8 (9)
doi: 10.1021/nl801288d
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
We report on reversible metal to insulator transitions in metallic single-walled carbon nanotube devices induced by repeated electron irradiation of a nanotube segment. The transition from a low-resistive, metallic state to a high-resistive, insulating state by 3 orders of magnitude was monitored by electron transport measurements. Application of a large voltage bias leads to a transition back to the original metallic state. Both states are stable in time, and transitions are fully reversible and reproducible. The data is evidence for a local perturbation of the nanotube electronic system by removable trapped charges in the underneath substrate and excludes structural damage of the nanotube. The result has implications for using electron-beam lithography in nanotube device fabrication.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2008 |
| Autor(en): | Marquardt, Christoph W. ; Dehm, Simone ; Vijayaraghavan, Aravind ; Blatt, Sabine ; Hennrich, Frank ; Krupke, Ralph |
| Art des Eintrags: | Bibliographie |
| Titel: | Reversible Metal−Insulator Transitions in Metallic Single-Walled Carbon Nanotubes |
| Sprache: | Englisch |
| Publikationsjahr: | 14 August 2008 |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Nano Letters |
| Jahrgang/Volume einer Zeitschrift: | 8 |
| (Heft-)Nummer: | 9 |
| DOI: | 10.1021/nl801288d |
| Kurzbeschreibung (Abstract): | We report on reversible metal to insulator transitions in metallic single-walled carbon nanotube devices induced by repeated electron irradiation of a nanotube segment. The transition from a low-resistive, metallic state to a high-resistive, insulating state by 3 orders of magnitude was monitored by electron transport measurements. Application of a large voltage bias leads to a transition back to the original metallic state. Both states are stable in time, and transitions are fully reversible and reproducible. The data is evidence for a local perturbation of the nanotube electronic system by removable trapped charges in the underneath substrate and excludes structural damage of the nanotube. The result has implications for using electron-beam lithography in nanotube device fabrication. |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Molekulare Nanostrukturen 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften |
| Hinterlegungsdatum: | 08 Nov 2011 12:40 |
| Letzte Änderung: | 05 Mär 2013 09:55 |
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