Vijayaraghavan, Aravind ; Marquardt, Christoph W. ; Dehm, Simone ; Hennrich, Frank ; Krupke, Ralph (2009)
Imaging defects and junctions in single-walled carbon nanotubes by voltage-contrast scanning electron microscopy.
In: Carbon, 48 (2)
doi: 10.1016/j.carbon.2009.09.067
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Voltage-contrast scanning electron microscopy is demonstrated as a new technique to locate and characterize defects in single-walled carbon nanotubes. This method images the surface potential along and surrounding a nanotube in device configuration and it is used here to study the following: (a) structural point-defects formed during nanotube growth, (b) nano-scale gap formed by high-current electrical breakdown, (c) electronic defect such as electron-irradiation induced metal-insulator transition, and (d) charge injection into the substrate which causes hysteresis in nanotube devices. The in situ characterization of defect healing under high bias is also shown. The origin of voltage-contrast, the influence of the above defects on the contrast profiles and optimum imaging conditions are discussed.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2009 |
| Autor(en): | Vijayaraghavan, Aravind ; Marquardt, Christoph W. ; Dehm, Simone ; Hennrich, Frank ; Krupke, Ralph |
| Art des Eintrags: | Bibliographie |
| Titel: | Imaging defects and junctions in single-walled carbon nanotubes by voltage-contrast scanning electron microscopy |
| Sprache: | Englisch |
| Publikationsjahr: | 25 September 2009 |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Carbon |
| Jahrgang/Volume einer Zeitschrift: | 48 |
| (Heft-)Nummer: | 2 |
| DOI: | 10.1016/j.carbon.2009.09.067 |
| Kurzbeschreibung (Abstract): | Voltage-contrast scanning electron microscopy is demonstrated as a new technique to locate and characterize defects in single-walled carbon nanotubes. This method images the surface potential along and surrounding a nanotube in device configuration and it is used here to study the following: (a) structural point-defects formed during nanotube growth, (b) nano-scale gap formed by high-current electrical breakdown, (c) electronic defect such as electron-irradiation induced metal-insulator transition, and (d) charge injection into the substrate which causes hysteresis in nanotube devices. The in situ characterization of defect healing under high bias is also shown. The origin of voltage-contrast, the influence of the above defects on the contrast profiles and optimum imaging conditions are discussed. |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Molekulare Nanostrukturen 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften |
| Hinterlegungsdatum: | 08 Nov 2011 12:26 |
| Letzte Änderung: | 05 Mär 2013 09:55 |
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