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Imaging conduction pathways in carbon nanotube network transistors by voltage-contrast scanning electron microscopy

Vijayaraghavan, Aravind and Timmermans, Marina Y. and Grigoras, Kestutis and Nasibulin, Albert G. and Kauppinen, Esko I. and Krupke, Ralph (2011):
Imaging conduction pathways in carbon nanotube network transistors by voltage-contrast scanning electron microscopy.
22, In: Nanotechnology, (26), p. 265715, ISSN 0957-4484, [Online-Edition: http://dx.doi.org/10.1088/0957-4484/22/26/265715],
[Article]

Abstract

The performance of field-effect transistors based on single-walled carbon nanotube (SWCNT) networks depends on the electrical percolation of semiconducting and metallic nanotube pathways within the network. We present voltage-contrast scanning electron microscopy (VC-SEM) as a new tool for imaging percolation in a SWCNT network with nano-scale resolution. Under external bias, the secondary-electron contrast of SWCNTs depends on their conductivity, and therefore it is possible to image the preferred conduction pathways within a network by following the contrast evolution under bias in a scanning electron microscope. The experimental VC-SEM results are correlated to percolation models of SWCNT-bundle networks.

Item Type: Article
Erschienen: 2011
Creators: Vijayaraghavan, Aravind and Timmermans, Marina Y. and Grigoras, Kestutis and Nasibulin, Albert G. and Kauppinen, Esko I. and Krupke, Ralph
Title: Imaging conduction pathways in carbon nanotube network transistors by voltage-contrast scanning electron microscopy
Language: English
Abstract:

The performance of field-effect transistors based on single-walled carbon nanotube (SWCNT) networks depends on the electrical percolation of semiconducting and metallic nanotube pathways within the network. We present voltage-contrast scanning electron microscopy (VC-SEM) as a new tool for imaging percolation in a SWCNT network with nano-scale resolution. Under external bias, the secondary-electron contrast of SWCNTs depends on their conductivity, and therefore it is possible to image the preferred conduction pathways within a network by following the contrast evolution under bias in a scanning electron microscope. The experimental VC-SEM results are correlated to percolation models of SWCNT-bundle networks.

Journal or Publication Title: Nanotechnology
Volume: 22
Number: 26
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Fachgebiet Molekulare Nanostrukturen
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 08 Nov 2011 10:39
Official URL: http://dx.doi.org/10.1088/0957-4484/22/26/265715
Identification Number: doi:10.1088/0957-4484/22/26/265715
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