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Imaging conduction pathways in carbon nanotube network transistors by voltage-contrast scanning electron microscopy

Vijayaraghavan, Aravind ; Timmermans, Marina Y. ; Grigoras, Kestutis ; Nasibulin, Albert G. ; Kauppinen, Esko I. ; Krupke, Ralph (2011)
Imaging conduction pathways in carbon nanotube network transistors by voltage-contrast scanning electron microscopy.
In: Nanotechnology, 22 (26)
doi: 10.1088/0957-4484/22/26/265715
Artikel, Bibliographie

Kurzbeschreibung (Abstract)

The performance of field-effect transistors based on single-walled carbon nanotube (SWCNT) networks depends on the electrical percolation of semiconducting and metallic nanotube pathways within the network. We present voltage-contrast scanning electron microscopy (VC-SEM) as a new tool for imaging percolation in a SWCNT network with nano-scale resolution. Under external bias, the secondary-electron contrast of SWCNTs depends on their conductivity, and therefore it is possible to image the preferred conduction pathways within a network by following the contrast evolution under bias in a scanning electron microscope. The experimental VC-SEM results are correlated to percolation models of SWCNT-bundle networks.

Typ des Eintrags: Artikel
Erschienen: 2011
Autor(en): Vijayaraghavan, Aravind ; Timmermans, Marina Y. ; Grigoras, Kestutis ; Nasibulin, Albert G. ; Kauppinen, Esko I. ; Krupke, Ralph
Art des Eintrags: Bibliographie
Titel: Imaging conduction pathways in carbon nanotube network transistors by voltage-contrast scanning electron microscopy
Sprache: Englisch
Publikationsjahr: 18 Mai 2011
Titel der Zeitschrift, Zeitung oder Schriftenreihe: Nanotechnology
Jahrgang/Volume einer Zeitschrift: 22
(Heft-)Nummer: 26
DOI: 10.1088/0957-4484/22/26/265715
Kurzbeschreibung (Abstract):

The performance of field-effect transistors based on single-walled carbon nanotube (SWCNT) networks depends on the electrical percolation of semiconducting and metallic nanotube pathways within the network. We present voltage-contrast scanning electron microscopy (VC-SEM) as a new tool for imaging percolation in a SWCNT network with nano-scale resolution. Under external bias, the secondary-electron contrast of SWCNTs depends on their conductivity, and therefore it is possible to image the preferred conduction pathways within a network by following the contrast evolution under bias in a scanning electron microscope. The experimental VC-SEM results are correlated to percolation models of SWCNT-bundle networks.

Fachbereich(e)/-gebiet(e): 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Molekulare Nanostrukturen
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft
11 Fachbereich Material- und Geowissenschaften
Hinterlegungsdatum: 08 Nov 2011 10:39
Letzte Änderung: 05 Mär 2013 09:55
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