Körber, C. ; Krishnakumar, V. ; Klein, Andreas ; Panaccione, G. ; Torelli, P. ; Walsh, A. ; Lopes Ferreira da Silva, J. ; Wei, S.-H. ; Egdell, R. G. ; Payne, D. J. (2010)
Electronic structure of In2O3 and Sn-doped In2O3 by hard x-ray photoemission spectroscopy.
In: Physical Review B, 81 (16)
doi: 10.1103/PhysRevB.81.165207
Artikel, Bibliographie
Dies ist die neueste Version dieses Eintrags.
Kurzbeschreibung (Abstract)
The valence and core levels of In(2)O(3) and Sn-doped In(2)O(3) have been studied by hard x-ray photoemission spectroscopy (hv = 6000 eV) and by conventional Al K alpha (hv = 1486.6 eV) x-ray photoemission spectroscopy. The experimental spectra are compared with density-functional theory calculations. It is shown that structure deriving from electronic levels with significant In or Sn 5s character is selectively enhanced under 6000 eV excitation. This allows us to infer that conduction band states in Sn-doped samples and states at the bottom of the valence band both contain a pronounced In 5s contribution. The In 3d core line measured at hv = 1486.6 eV for both undoped and Sn-doped In(2)O(3) display an asymmetric lineshape, and may be fitted with two components associated with screened and unscreened final states. The In 3d core line spectra excited at hv = 6000 eV for the Sn-doped samples display pronounced shoulders and demand a fit with two components. The In 3d core line spectrum for the undoped sample can also be fitted with two components, although the relative intensity of the component associated with the screened final state is low, compared to excitation at 1486.6 eV. These results are consistent with a high concentration of carriers confined close to the surface of nominally undoped In(2)O(3). This conclusion is in accord with the fact that a conduction band feature observed for undoped In(2)O(3) in Al K alpha x-ray photoemission is much weaker than expected in hard x-ray photoemission.
| Typ des Eintrags: | Artikel | ||||
|---|---|---|---|---|---|
| Erschienen: | 2010 | ||||
| Autor(en): | Körber, C. ; Krishnakumar, V. ; Klein, Andreas ; Panaccione, G. ; Torelli, P. ; Walsh, A. ; Lopes Ferreira da Silva, J. ; Wei, S.-H. ; Egdell, R. G. ; Payne, D. J. | ||||
| Art des Eintrags: | Bibliographie | ||||
| Titel: | Electronic structure of In2O3 and Sn-doped In2O3 by hard x-ray photoemission spectroscopy | ||||
| Sprache: | Englisch | ||||
| Publikationsjahr: | 2010 | ||||
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Physical Review B | ||||
| Jahrgang/Volume einer Zeitschrift: | 81 | ||||
| (Heft-)Nummer: | 16 | ||||
| DOI: | 10.1103/PhysRevB.81.165207 | ||||
| Zugehörige Links: | |||||
| Kurzbeschreibung (Abstract): | The valence and core levels of In(2)O(3) and Sn-doped In(2)O(3) have been studied by hard x-ray photoemission spectroscopy (hv = 6000 eV) and by conventional Al K alpha (hv = 1486.6 eV) x-ray photoemission spectroscopy. The experimental spectra are compared with density-functional theory calculations. It is shown that structure deriving from electronic levels with significant In or Sn 5s character is selectively enhanced under 6000 eV excitation. This allows us to infer that conduction band states in Sn-doped samples and states at the bottom of the valence band both contain a pronounced In 5s contribution. The In 3d core line measured at hv = 1486.6 eV for both undoped and Sn-doped In(2)O(3) display an asymmetric lineshape, and may be fitted with two components associated with screened and unscreened final states. The In 3d core line spectra excited at hv = 6000 eV for the Sn-doped samples display pronounced shoulders and demand a fit with two components. The In 3d core line spectrum for the undoped sample can also be fitted with two components, although the relative intensity of the component associated with the screened final state is low, compared to excitation at 1486.6 eV. These results are consistent with a high concentration of carriers confined close to the surface of nominally undoped In(2)O(3). This conclusion is in accord with the fact that a conduction band feature observed for undoped In(2)O(3) in Al K alpha x-ray photoemission is much weaker than expected in hard x-ray photoemission. |
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| Freie Schlagworte: | ITO In2O3 photoemission XPS | ||||
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| Zusätzliche Informationen: | SFB 595 D3 |
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| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung DFG-Sonderforschungsbereiche (inkl. Transregio) DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche Zentrale Einrichtungen DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > D - Bauteileigenschaften DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > D - Bauteileigenschaften > Teilprojekt D3: Funktion und Ermüdung oxidischer Elektroden in organischen Leuchtdioden |
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| Hinterlegungsdatum: | 29 Okt 2011 08:08 | ||||
| Letzte Änderung: | 03 Jul 2024 02:19 | ||||
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| Suche nach Titel in: | TUfind oder in Google | ||||
Verfügbare Versionen dieses Eintrags
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Electronic structure of In₂O₃ and Sn-doped In₂O₃ by hard x-ray photoemission spectroscopy. (deposited 20 Apr 2022 12:10)
- Electronic structure of In2O3 and Sn-doped In2O3 by hard x-ray photoemission spectroscopy. (deposited 29 Okt 2011 08:08) [Gegenwärtig angezeigt]
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