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Unipolar space-charge limited current through layers with a disparate concentration of shallow traps: Experiment and model

Fleissner, Arne and Weise, Wieland and Seggern, Heinz von (2005):
Unipolar space-charge limited current through layers with a disparate concentration of shallow traps: Experiment and model.
97, In: Journal of Applied Physics, (4), American Institute of Physics Publishing, pp. 043701-1, ISSN 00218979, [Online-Edition: http://dx.doi.org/10.1063/1.1840094],
[Article]

Abstract

The influence of the spatial distribution of trap states on unipolar space-charge limited current (SCLC) is investigated experimentally and theoretically. Thin-layered films of the small molecule organic semiconductor N,N′-di(1-naphtyl)-N,N′-diphenylbenzidine (α-NPD) are vapor deposited on indium tin oxide, with aluminum as the counter electrode. The small molecule 4,4′,4″-tris-[N-(1-naphtyl)-N-(phenylamino)]-triphenylamine (1-NaphDATA), which creates well-known shallow traps for holes, is used as dopant. The realized organic films consist of three layers, one of which is homogeneously doped. The influence of the spatial position of the doped layer on the current–voltage characteristics of the diodes is examined. Compared to an undoped device, the current density is strongly decreased and varies over orders of magnitude for the different spatial positions of the doped layer. It is shown that traps near the injecting electrode have the most pronounced effect on SCLC. A model for unipolar SCLC through a system of homogeneous layers with different trapping parameters for shallow traps is presented. The model quantitatively describes the experimental data and is used to calculate the spatial distributions of the charge-carrier density and the electric-field strength in the differently doped devices.

Item Type: Article
Erschienen: 2005
Creators: Fleissner, Arne and Weise, Wieland and Seggern, Heinz von
Title: Unipolar space-charge limited current through layers with a disparate concentration of shallow traps: Experiment and model
Language: English
Abstract:

The influence of the spatial distribution of trap states on unipolar space-charge limited current (SCLC) is investigated experimentally and theoretically. Thin-layered films of the small molecule organic semiconductor N,N′-di(1-naphtyl)-N,N′-diphenylbenzidine (α-NPD) are vapor deposited on indium tin oxide, with aluminum as the counter electrode. The small molecule 4,4′,4″-tris-[N-(1-naphtyl)-N-(phenylamino)]-triphenylamine (1-NaphDATA), which creates well-known shallow traps for holes, is used as dopant. The realized organic films consist of three layers, one of which is homogeneously doped. The influence of the spatial position of the doped layer on the current–voltage characteristics of the diodes is examined. Compared to an undoped device, the current density is strongly decreased and varies over orders of magnitude for the different spatial positions of the doped layer. It is shown that traps near the injecting electrode have the most pronounced effect on SCLC. A model for unipolar SCLC through a system of homogeneous layers with different trapping parameters for shallow traps is presented. The model quantitatively describes the experimental data and is used to calculate the spatial distributions of the charge-carrier density and the electric-field strength in the differently doped devices.

Journal or Publication Title: Journal of Applied Physics
Volume: 97
Number: 4
Publisher: American Institute of Physics Publishing
Uncontrolled Keywords: tin compounds, indium compounds, aluminium, organic semiconductors, semiconductor thin films, semiconductor growth, vacuum deposition, semiconductor doping, doping profiles, semiconductor diodes, semiconductor device models, space-charge-limited conduction, carrier density, electron traps, hole traps, impurity states, current density, space-charge limited devices
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Electronic Materials
Zentrale Einrichtungen
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > D - Component properties
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > D - Component properties > Subproject D4: Fatigue of organic electronic devices
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres
DFG-Collaborative Research Centres (incl. Transregio)
Date Deposited: 16 Sep 2011 14:02
Official URL: http://dx.doi.org/10.1063/1.1840094
Additional Information:

SFB 595 D4

Identification Number: doi:10.1063/1.1840094
Funders: This work was supported by the Deutsche Forschungsgemeinschaft (DFG) through Sonderforschungsbereich 595.
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