Weise, Wieland ; Keith, Torsten ; Malm, Norwin von ; Seggern, Heinz von (2005)
Trap concentration dependence of percolation in doped small molecule organic materials.
In: Journal of Applied Physics, 98 (4)
doi: 10.1063/1.2005378
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
The thermally stimulated current (TSC) technique is used to investigate the effect of doping of organic glassy thin films of the hole transport material N,N′-di(1-naphthyl)N,N′-diphenylbenzidine (α-NPD) with various concentrations of 4,4′,4″-tris(N-(1-naphthyl)-N-phenylamino)triphenylamine (1-NaphDATA). The mobility is estimated from current-voltage characteristics. At small dopant concentrations a TSC peak appears at about 200 K. Increasing the dopant concentration to about 4 vol % leads to a peak shift towards higher temperatures, related to decreasing mobility. When increasing the dopant concentration further, the peak shifts again to lower temperatures towards the peak position for pure 1-NaphDATA. The energy distribution of the trap structure is obtained utilizing the fractional TSC technique. In accordance to a higher-lying highest occupied molecular-orbital level of 1-NaphDATA as compared to the α-NPD matrix, the activation energy of a deep trap level of about 0.5 eV was reported previously for low doping concentrations up to a few percent. At higher dopant concentrations the deep traps vanish from the trap structure. The behavior can be interpreted as a change from a trap-controlled transport for small doping concentrations to a percolating transport on the dopant molecules themselves. It is shown that the onset of percolation at rather low concentrations can be explained by hopping including not only nearest neighbors.
Typ des Eintrags: | Artikel |
---|---|
Erschienen: | 2005 |
Autor(en): | Weise, Wieland ; Keith, Torsten ; Malm, Norwin von ; Seggern, Heinz von |
Art des Eintrags: | Bibliographie |
Titel: | Trap concentration dependence of percolation in doped small molecule organic materials |
Sprache: | Englisch |
Publikationsjahr: | August 2005 |
Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Journal of Applied Physics |
Jahrgang/Volume einer Zeitschrift: | 98 |
(Heft-)Nummer: | 4 |
DOI: | 10.1063/1.2005378 |
Kurzbeschreibung (Abstract): | The thermally stimulated current (TSC) technique is used to investigate the effect of doping of organic glassy thin films of the hole transport material N,N′-di(1-naphthyl)N,N′-diphenylbenzidine (α-NPD) with various concentrations of 4,4′,4″-tris(N-(1-naphthyl)-N-phenylamino)triphenylamine (1-NaphDATA). The mobility is estimated from current-voltage characteristics. At small dopant concentrations a TSC peak appears at about 200 K. Increasing the dopant concentration to about 4 vol % leads to a peak shift towards higher temperatures, related to decreasing mobility. When increasing the dopant concentration further, the peak shifts again to lower temperatures towards the peak position for pure 1-NaphDATA. The energy distribution of the trap structure is obtained utilizing the fractional TSC technique. In accordance to a higher-lying highest occupied molecular-orbital level of 1-NaphDATA as compared to the α-NPD matrix, the activation energy of a deep trap level of about 0.5 eV was reported previously for low doping concentrations up to a few percent. At higher dopant concentrations the deep traps vanish from the trap structure. The behavior can be interpreted as a change from a trap-controlled transport for small doping concentrations to a percolating transport on the dopant molecules themselves. It is shown that the onset of percolation at rather low concentrations can be explained by hopping including not only nearest neighbors. |
Freie Schlagworte: | organic semiconductors, semiconductor thin films, percolation, thermally stimulated currents, hole traps, hole mobility, semiconductor doping, doping profiles, deep levels, hopping conduction |
Zusätzliche Informationen: | SFB 595 D4 |
Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften DFG-Sonderforschungsbereiche (inkl. Transregio) DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche Zentrale Einrichtungen DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > D - Bauteileigenschaften DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > D - Bauteileigenschaften > Teilprojekt D4: Betriebsbedingte Ermüdung von Bauelementen aus organischen Halbleitern |
Hinterlegungsdatum: | 16 Sep 2011 13:57 |
Letzte Änderung: | 20 Mär 2019 09:40 |
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