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Trap concentration dependence of percolation in doped small molecule organic materials

Weise, Wieland ; Keith, Torsten ; Malm, Norwin von ; Seggern, Heinz von (2005)
Trap concentration dependence of percolation in doped small molecule organic materials.
In: Journal of Applied Physics, 98 (4)
doi: 10.1063/1.2005378
Artikel, Bibliographie

Kurzbeschreibung (Abstract)

The thermally stimulated current (TSC) technique is used to investigate the effect of doping of organic glassy thin films of the hole transport material N,N′-di(1-naphthyl)N,N′-diphenylbenzidine (α-NPD) with various concentrations of 4,4′,4″-tris(N-(1-naphthyl)-N-phenylamino)triphenylamine (1-NaphDATA). The mobility is estimated from current-voltage characteristics. At small dopant concentrations a TSC peak appears at about 200 K. Increasing the dopant concentration to about 4 vol % leads to a peak shift towards higher temperatures, related to decreasing mobility. When increasing the dopant concentration further, the peak shifts again to lower temperatures towards the peak position for pure 1-NaphDATA. The energy distribution of the trap structure is obtained utilizing the fractional TSC technique. In accordance to a higher-lying highest occupied molecular-orbital level of 1-NaphDATA as compared to the α-NPD matrix, the activation energy of a deep trap level of about 0.5 eV was reported previously for low doping concentrations up to a few percent. At higher dopant concentrations the deep traps vanish from the trap structure. The behavior can be interpreted as a change from a trap-controlled transport for small doping concentrations to a percolating transport on the dopant molecules themselves. It is shown that the onset of percolation at rather low concentrations can be explained by hopping including not only nearest neighbors.

Typ des Eintrags: Artikel
Erschienen: 2005
Autor(en): Weise, Wieland ; Keith, Torsten ; Malm, Norwin von ; Seggern, Heinz von
Art des Eintrags: Bibliographie
Titel: Trap concentration dependence of percolation in doped small molecule organic materials
Sprache: Englisch
Publikationsjahr: August 2005
Titel der Zeitschrift, Zeitung oder Schriftenreihe: Journal of Applied Physics
Jahrgang/Volume einer Zeitschrift: 98
(Heft-)Nummer: 4
DOI: 10.1063/1.2005378
Kurzbeschreibung (Abstract):

The thermally stimulated current (TSC) technique is used to investigate the effect of doping of organic glassy thin films of the hole transport material N,N′-di(1-naphthyl)N,N′-diphenylbenzidine (α-NPD) with various concentrations of 4,4′,4″-tris(N-(1-naphthyl)-N-phenylamino)triphenylamine (1-NaphDATA). The mobility is estimated from current-voltage characteristics. At small dopant concentrations a TSC peak appears at about 200 K. Increasing the dopant concentration to about 4 vol % leads to a peak shift towards higher temperatures, related to decreasing mobility. When increasing the dopant concentration further, the peak shifts again to lower temperatures towards the peak position for pure 1-NaphDATA. The energy distribution of the trap structure is obtained utilizing the fractional TSC technique. In accordance to a higher-lying highest occupied molecular-orbital level of 1-NaphDATA as compared to the α-NPD matrix, the activation energy of a deep trap level of about 0.5 eV was reported previously for low doping concentrations up to a few percent. At higher dopant concentrations the deep traps vanish from the trap structure. The behavior can be interpreted as a change from a trap-controlled transport for small doping concentrations to a percolating transport on the dopant molecules themselves. It is shown that the onset of percolation at rather low concentrations can be explained by hopping including not only nearest neighbors.

Freie Schlagworte: organic semiconductors, semiconductor thin films, percolation, thermally stimulated currents, hole traps, hole mobility, semiconductor doping, doping profiles, deep levels, hopping conduction
Zusätzliche Informationen:

SFB 595 D4

Fachbereich(e)/-gebiet(e): 11 Fachbereich Material- und Geowissenschaften
DFG-Sonderforschungsbereiche (inkl. Transregio)
DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche
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DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung
DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > D - Bauteileigenschaften
DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > D - Bauteileigenschaften > Teilprojekt D4: Betriebsbedingte Ermüdung von Bauelementen aus organischen Halbleitern
Hinterlegungsdatum: 16 Sep 2011 13:57
Letzte Änderung: 20 Mär 2019 09:40
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