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Trap-controlled hole transport in small molecule organic semiconductors

Fleissner, Arne and Schmid, Hanna and Melzer, Christian and Seggern, Heinz von (2007):
Trap-controlled hole transport in small molecule organic semiconductors.
In: Applied Physics Letters, 91 (24), pp. 242103-1-242103-3, ISSN 00036951,
[Online-Edition: http://dx.doi.org/10.1063/1.2820448],
[Article]

Abstract

The influence of trap concentration on hole transport is investigated by an optical time-of-flight method for the amorphous small molecule organic semiconductor N,N′-bis(1-naphtyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamin (α-NPD) doped with neutral hole traps by codeposition of 4,4′,4″-tris-[N-(1-naphtyl)-N-(phenylamino)]-triphenylamine (1-NaphDATA). α-NPD doped with 120 ppm 1-NaphDATA exhibits nondispersive hole transport like undoped α-NPD, but trap-controlled with reduced mobility. The trap depth derived from the mobility decrease coincides with the ionization potential difference of α-NPD and 1-NaphDATA. The transition to dispersive transport for increasing trap concentration to 1160 ppm is explained by an energetic relaxation of optically generated charge carriers within a density of states broadened by traps.

Item Type: Article
Erschienen: 2007
Creators: Fleissner, Arne and Schmid, Hanna and Melzer, Christian and Seggern, Heinz von
Title: Trap-controlled hole transport in small molecule organic semiconductors
Language: English
Abstract:

The influence of trap concentration on hole transport is investigated by an optical time-of-flight method for the amorphous small molecule organic semiconductor N,N′-bis(1-naphtyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamin (α-NPD) doped with neutral hole traps by codeposition of 4,4′,4″-tris-[N-(1-naphtyl)-N-(phenylamino)]-triphenylamine (1-NaphDATA). α-NPD doped with 120 ppm 1-NaphDATA exhibits nondispersive hole transport like undoped α-NPD, but trap-controlled with reduced mobility. The trap depth derived from the mobility decrease coincides with the ionization potential difference of α-NPD and 1-NaphDATA. The transition to dispersive transport for increasing trap concentration to 1160 ppm is explained by an energetic relaxation of optically generated charge carriers within a density of states broadened by traps.

Journal or Publication Title: Applied Physics Letters
Volume: 91
Number: 24
Uncontrolled Keywords: amorphous semiconductors, carrier density, disperse systems, electron traps, electronic density of states, hole mobility, hole traps, ionisation potential, organic semiconductors
Divisions: 11 Department of Materials and Earth Sciences
DFG-Collaborative Research Centres (incl. Transregio)
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres
Zentrale Einrichtungen
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > D - Component properties
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > D - Component properties > Subproject D4: Fatigue of organic electronic devices
Date Deposited: 16 Sep 2011 13:32
Official URL: http://dx.doi.org/10.1063/1.2820448
Additional Information:

SFB 595 D4

Identification Number: doi:10.1063/1.2820448
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