Fleissner, Arne ; Schmid, Hanna ; Melzer, Christian ; Seggern, Heinz von (2007)
Trap-controlled hole transport in small molecule organic semiconductors.
In: Applied Physics Letters, 91 (24)
doi: 10.1063/1.2820448
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
The influence of trap concentration on hole transport is investigated by an optical time-of-flight method for the amorphous small molecule organic semiconductor N,N′-bis(1-naphtyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamin (α-NPD) doped with neutral hole traps by codeposition of 4,4′,4″-tris-[N-(1-naphtyl)-N-(phenylamino)]-triphenylamine (1-NaphDATA). α-NPD doped with 120 ppm 1-NaphDATA exhibits nondispersive hole transport like undoped α-NPD, but trap-controlled with reduced mobility. The trap depth derived from the mobility decrease coincides with the ionization potential difference of α-NPD and 1-NaphDATA. The transition to dispersive transport for increasing trap concentration to 1160 ppm is explained by an energetic relaxation of optically generated charge carriers within a density of states broadened by traps.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2007 |
| Autor(en): | Fleissner, Arne ; Schmid, Hanna ; Melzer, Christian ; Seggern, Heinz von |
| Art des Eintrags: | Bibliographie |
| Titel: | Trap-controlled hole transport in small molecule organic semiconductors |
| Sprache: | Englisch |
| Publikationsjahr: | Dezember 2007 |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Applied Physics Letters |
| Jahrgang/Volume einer Zeitschrift: | 91 |
| (Heft-)Nummer: | 24 |
| DOI: | 10.1063/1.2820448 |
| Kurzbeschreibung (Abstract): | The influence of trap concentration on hole transport is investigated by an optical time-of-flight method for the amorphous small molecule organic semiconductor N,N′-bis(1-naphtyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamin (α-NPD) doped with neutral hole traps by codeposition of 4,4′,4″-tris-[N-(1-naphtyl)-N-(phenylamino)]-triphenylamine (1-NaphDATA). α-NPD doped with 120 ppm 1-NaphDATA exhibits nondispersive hole transport like undoped α-NPD, but trap-controlled with reduced mobility. The trap depth derived from the mobility decrease coincides with the ionization potential difference of α-NPD and 1-NaphDATA. The transition to dispersive transport for increasing trap concentration to 1160 ppm is explained by an energetic relaxation of optically generated charge carriers within a density of states broadened by traps. |
| Freie Schlagworte: | amorphous semiconductors, carrier density, disperse systems, electron traps, electronic density of states, hole mobility, hole traps, ionisation potential, organic semiconductors |
| Zusätzliche Informationen: | SFB 595 D4 |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften DFG-Sonderforschungsbereiche (inkl. Transregio) DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche Zentrale Einrichtungen DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > D - Bauteileigenschaften DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > D - Bauteileigenschaften > Teilprojekt D4: Betriebsbedingte Ermüdung von Bauelementen aus organischen Halbleitern |
| Hinterlegungsdatum: | 16 Sep 2011 13:32 |
| Letzte Änderung: | 21 Mär 2019 07:20 |
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