Gassenbauer, Yvonne ; Klein, Andreas (2006)
Electronic and Chemical Properties of Tin-Doped Indium Oxide (ITO) Surfaces and ITO/ZnPc Interfaces Studied In-situ by Photoelectron Spectroscopy.
In: The Journal of Physical Chemistry B, 110 (10)
doi: 10.1021/jp056640b
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
The chemical and electronic properties of tin-doped indium oxide (ITO) surfaces and its interface with zinc phthalocyanine (ZnPc) were investigated using photoelectron spectroscopy partly excited by synchrotron radiation from the BESSY II storage ring. Preparation and analysis of ITO and ITO/ZnPc layer sequences were performed in-situ without breaking vacuum. The Fermi level position at the ITO surface varies strongly with oxygen content in the sputter gas, which is attributed to an increase of surface band bending as a consequence of the passivation of the metallic surface states of ITO. The shift of the Fermi level is accompanied by a parallel increase of the work function from 4.4 to 5.2 eV. No changes in the surface dipole are observed with an ionization potential of IP = 7.65 ± 0.1 eV. The barrier height for hole injection at the ITO/ZnPc interface does not vary with initial ITO work function, which can be related to different chemical reactivities at the interface.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2006 |
| Autor(en): | Gassenbauer, Yvonne ; Klein, Andreas |
| Art des Eintrags: | Bibliographie |
| Titel: | Electronic and Chemical Properties of Tin-Doped Indium Oxide (ITO) Surfaces and ITO/ZnPc Interfaces Studied In-situ by Photoelectron Spectroscopy |
| Sprache: | Englisch |
| Publikationsjahr: | Februar 2006 |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | The Journal of Physical Chemistry B |
| Jahrgang/Volume einer Zeitschrift: | 110 |
| (Heft-)Nummer: | 10 |
| DOI: | 10.1021/jp056640b |
| Kurzbeschreibung (Abstract): | The chemical and electronic properties of tin-doped indium oxide (ITO) surfaces and its interface with zinc phthalocyanine (ZnPc) were investigated using photoelectron spectroscopy partly excited by synchrotron radiation from the BESSY II storage ring. Preparation and analysis of ITO and ITO/ZnPc layer sequences were performed in-situ without breaking vacuum. The Fermi level position at the ITO surface varies strongly with oxygen content in the sputter gas, which is attributed to an increase of surface band bending as a consequence of the passivation of the metallic surface states of ITO. The shift of the Fermi level is accompanied by a parallel increase of the work function from 4.4 to 5.2 eV. No changes in the surface dipole are observed with an ionization potential of IP = 7.65 ± 0.1 eV. The barrier height for hole injection at the ITO/ZnPc interface does not vary with initial ITO work function, which can be related to different chemical reactivities at the interface. |
| Zusätzliche Informationen: | SFB 595 D3 |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung Zentrale Einrichtungen DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > D - Bauteileigenschaften DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > D - Bauteileigenschaften > Teilprojekt D3: Funktion und Ermüdung oxidischer Elektroden in organischen Leuchtdioden DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche DFG-Sonderforschungsbereiche (inkl. Transregio) |
| Hinterlegungsdatum: | 16 Sep 2011 13:12 |
| Letzte Änderung: | 23 Mär 2015 15:59 |
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