TU Darmstadt / ULB / TUbiblio

Surface versus bulk electronic/defect structures of transparent conducting oxides: I. Indium oxide and ITO

Harvey, S. P. and Mason, T. O. and Gassenbauer, Y. and Schafranek, R. and Klein, Andreas (2006):
Surface versus bulk electronic/defect structures of transparent conducting oxides: I. Indium oxide and ITO.
In: Journal of Physics D: Applied Physics, pp. 3959-3968, 39, (18), ISSN 0022-3727,
[Online-Edition: http://dx.doi.org/10.1088/0022-3727/39/18/006],
[Article]

Abstract

Carefully prepared bulk ceramic specimens of In2O3 and Sn-doped In2O3 (ITO) were analysed with x-ray and UV photoelectron spectroscopy before and after heat treatment in vacuum and oxygen atmosphere. The results on ex situ prepared ceramic specimens were shown to be comparable to those of in situ deposited-measured thin films in terms of core levels, Fermi levels and ionization potentials. This suggests a viable path for rapid synthesis and screening of surface electronic-defect properties for other transparent conducting oxides (TCO) materials. A strong correlation exists between the surface electronic-defect structure of In2O3-based TCOs and their underlying electronic-defect structure, owing to the unique crystal-defect properties of the bixbyite structure. This leads to formation of a chemical depletion at the surface and the formation of a peroxide surface species for higher preparation temperatures. The results are discussed with respect to the use of ITO as hole injection electrode in organic light emitting devices.

Item Type: Article
Erschienen: 2006
Creators: Harvey, S. P. and Mason, T. O. and Gassenbauer, Y. and Schafranek, R. and Klein, Andreas
Title: Surface versus bulk electronic/defect structures of transparent conducting oxides: I. Indium oxide and ITO
Language: English
Abstract:

Carefully prepared bulk ceramic specimens of In2O3 and Sn-doped In2O3 (ITO) were analysed with x-ray and UV photoelectron spectroscopy before and after heat treatment in vacuum and oxygen atmosphere. The results on ex situ prepared ceramic specimens were shown to be comparable to those of in situ deposited-measured thin films in terms of core levels, Fermi levels and ionization potentials. This suggests a viable path for rapid synthesis and screening of surface electronic-defect properties for other transparent conducting oxides (TCO) materials. A strong correlation exists between the surface electronic-defect structure of In2O3-based TCOs and their underlying electronic-defect structure, owing to the unique crystal-defect properties of the bixbyite structure. This leads to formation of a chemical depletion at the surface and the formation of a peroxide surface species for higher preparation temperatures. The results are discussed with respect to the use of ITO as hole injection electrode in organic light emitting devices.

Journal or Publication Title: Journal of Physics D: Applied Physics
Volume: 39
Number: 18
Uncontrolled Keywords: Condensed matter: electrical, magnetic and optical Surfaces, interfaces and thin films Condensed matter: structural, mechanical & thermal
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Surface Science
Zentrale Einrichtungen
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > D - Component properties
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > D - Component properties > Subproject D3: Function and fatigue of oxide electrodes in organic light emitting diodes
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres
DFG-Collaborative Research Centres (incl. Transregio)
Date Deposited: 16 Sep 2011 12:58
Official URL: http://dx.doi.org/10.1088/0022-3727/39/18/006
Additional Information:

SFB 595 D3

Identification Number: doi:10.1088/0022-3727/39/18/006
Export:

Optionen (nur für Redakteure)

View Item View Item