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Surface versus bulk electronic/defect structures of transparent conducting oxides: I. Indium oxide and ITO

Harvey, S. P. ; Mason, T. O. ; Gassenbauer, Y. ; Schafranek, R. ; Klein, Andreas (2006)
Surface versus bulk electronic/defect structures of transparent conducting oxides: I. Indium oxide and ITO.
In: Journal of Physics D: Applied Physics, 39 (18)
doi: 10.1088/0022-3727/39/18/006
Artikel, Bibliographie

Kurzbeschreibung (Abstract)

Carefully prepared bulk ceramic specimens of In2O3 and Sn-doped In2O3 (ITO) were analysed with x-ray and UV photoelectron spectroscopy before and after heat treatment in vacuum and oxygen atmosphere. The results on ex situ prepared ceramic specimens were shown to be comparable to those of in situ deposited-measured thin films in terms of core levels, Fermi levels and ionization potentials. This suggests a viable path for rapid synthesis and screening of surface electronic-defect properties for other transparent conducting oxides (TCO) materials. A strong correlation exists between the surface electronic-defect structure of In2O3-based TCOs and their underlying electronic-defect structure, owing to the unique crystal-defect properties of the bixbyite structure. This leads to formation of a chemical depletion at the surface and the formation of a peroxide surface species for higher preparation temperatures. The results are discussed with respect to the use of ITO as hole injection electrode in organic light emitting devices.

Typ des Eintrags: Artikel
Erschienen: 2006
Autor(en): Harvey, S. P. ; Mason, T. O. ; Gassenbauer, Y. ; Schafranek, R. ; Klein, Andreas
Art des Eintrags: Bibliographie
Titel: Surface versus bulk electronic/defect structures of transparent conducting oxides: I. Indium oxide and ITO
Sprache: Englisch
Publikationsjahr: September 2006
Titel der Zeitschrift, Zeitung oder Schriftenreihe: Journal of Physics D: Applied Physics
Jahrgang/Volume einer Zeitschrift: 39
(Heft-)Nummer: 18
DOI: 10.1088/0022-3727/39/18/006
Kurzbeschreibung (Abstract):

Carefully prepared bulk ceramic specimens of In2O3 and Sn-doped In2O3 (ITO) were analysed with x-ray and UV photoelectron spectroscopy before and after heat treatment in vacuum and oxygen atmosphere. The results on ex situ prepared ceramic specimens were shown to be comparable to those of in situ deposited-measured thin films in terms of core levels, Fermi levels and ionization potentials. This suggests a viable path for rapid synthesis and screening of surface electronic-defect properties for other transparent conducting oxides (TCO) materials. A strong correlation exists between the surface electronic-defect structure of In2O3-based TCOs and their underlying electronic-defect structure, owing to the unique crystal-defect properties of the bixbyite structure. This leads to formation of a chemical depletion at the surface and the formation of a peroxide surface species for higher preparation temperatures. The results are discussed with respect to the use of ITO as hole injection electrode in organic light emitting devices.

Freie Schlagworte: Condensed matter: electrical, magnetic and optical Surfaces, interfaces and thin films Condensed matter: structural, mechanical & thermal
Zusätzliche Informationen:

SFB 595 D3

Fachbereich(e)/-gebiet(e): 11 Fachbereich Material- und Geowissenschaften
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung
Zentrale Einrichtungen
DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung
DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > D - Bauteileigenschaften
DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > D - Bauteileigenschaften > Teilprojekt D3: Funktion und Ermüdung oxidischer Elektroden in organischen Leuchtdioden
DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche
DFG-Sonderforschungsbereiche (inkl. Transregio)
Hinterlegungsdatum: 16 Sep 2011 12:58
Letzte Änderung: 23 Mär 2015 15:53
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