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Surface potential changes of semiconducting oxides monitored by high-pressure photoelectron spectroscopy: Importance of electron concentration at the surface

Gassenbauer, Y. and Schafranek, R. and Klein, Andreas and Zafeiratos, S. and Hävecker, M. and Knop-Gericke, A. and Schlögl, R. (2006):
Surface potential changes of semiconducting oxides monitored by high-pressure photoelectron spectroscopy: Importance of electron concentration at the surface.
In: Solid State Ionics, pp. 3123-3127, 177, (35-36), ISSN 01672738,
[Online-Edition: http://dx.doi.org/10.1016/j.ssi.2006.07.036],
[Article]

Abstract

The Fermi level position at surfaces of tin-doped indium oxide (ITO) thin films has been recorded during oxygen exposure using high-pressure photoelectron spectroscopy at the BESSY storage ring. The rate of Fermi level shifts varies considerably depending on the surface electron concentration, which is determined by the Fermi level position with respect to the energy of surface states.

Item Type: Article
Erschienen: 2006
Creators: Gassenbauer, Y. and Schafranek, R. and Klein, Andreas and Zafeiratos, S. and Hävecker, M. and Knop-Gericke, A. and Schlögl, R.
Title: Surface potential changes of semiconducting oxides monitored by high-pressure photoelectron spectroscopy: Importance of electron concentration at the surface
Language: English
Abstract:

The Fermi level position at surfaces of tin-doped indium oxide (ITO) thin films has been recorded during oxygen exposure using high-pressure photoelectron spectroscopy at the BESSY storage ring. The rate of Fermi level shifts varies considerably depending on the surface electron concentration, which is determined by the Fermi level position with respect to the energy of surface states.

Journal or Publication Title: Solid State Ionics
Volume: 177
Number: 35-36
Uncontrolled Keywords: Indium tin oxide; Fermi level; High pressure XPS; Surface states
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Surface Science
Zentrale Einrichtungen
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > D - Component properties
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > D - Component properties > Subproject D3: Function and fatigue of oxide electrodes in organic light emitting diodes
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres
DFG-Collaborative Research Centres (incl. Transregio)
Date Deposited: 16 Sep 2011 12:51
Official URL: http://dx.doi.org/10.1016/j.ssi.2006.07.036
Additional Information:

SFB 595 D3

Identification Number: doi:10.1016/j.ssi.2006.07.036
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