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Electronic properties of BaCuChF (Ch = S, Se, Te) surfaces and BaCuSeF/ZnPc interfaces

Zakutayev, A. and Tate, J. and Platt, H. A. S. and Keszler, D. A. and Hein, C. and Mayer, T. and Klein, Andreas and Jaegermann, W. (2010):
Electronic properties of BaCuChF (Ch = S, Se, Te) surfaces and BaCuSeF/ZnPc interfaces.
In: Journal of Applied Physics, pp. 103713-1, 107, (10), ISSN 00218979,
[Online-Edition: http://dx.doi.org/10.1063/1.3380594],
[Article]

Abstract

BaCuChF (Ch = S,Se,Te) surfaces and BaCuSeF interfaces with zinc phthalocyanine (ZnPc) were studied by photoelectron spectroscopy. BaCuChF compounds oxidize when exposed to ambient atmosphere. Se capping layers were studied as a means to produce representative surfaces for photoelectron spectroscopic measurements. Decapped BaCuSeF surfaces remain O-free and C-free when the Se layer is evaporated but they become F-deficient. The resulting surfaces have work functions of 4.85 eV and Fermi levels located 0.25 eV above the valence band maximum. In situ stepwise deposition of ZnPc on a BaCuSeF film surface produced a chemically inert interface with a hole-injection barrier of 0.11 eV.

Item Type: Article
Erschienen: 2010
Creators: Zakutayev, A. and Tate, J. and Platt, H. A. S. and Keszler, D. A. and Hein, C. and Mayer, T. and Klein, Andreas and Jaegermann, W.
Title: Electronic properties of BaCuChF (Ch = S, Se, Te) surfaces and BaCuSeF/ZnPc interfaces
Language: English
Abstract:

BaCuChF (Ch = S,Se,Te) surfaces and BaCuSeF interfaces with zinc phthalocyanine (ZnPc) were studied by photoelectron spectroscopy. BaCuChF compounds oxidize when exposed to ambient atmosphere. Se capping layers were studied as a means to produce representative surfaces for photoelectron spectroscopic measurements. Decapped BaCuSeF surfaces remain O-free and C-free when the Se layer is evaporated but they become F-deficient. The resulting surfaces have work functions of 4.85 eV and Fermi levels located 0.25 eV above the valence band maximum. In situ stepwise deposition of ZnPc on a BaCuSeF film surface produced a chemically inert interface with a hole-injection barrier of 0.11 eV.

Journal or Publication Title: Journal of Applied Physics
Volume: 107
Number: 10
Uncontrolled Keywords: barium compounds, chalcogenide glasses, copper compounds, Fermi level, interface states, organic semiconductors, organometallic compounds, photoelectron spectra, selenium compounds, semiconductor junctions, sulphur compounds, surface states, tellurium compounds, valence bands, work function, zinc compounds
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Surface Science
Zentrale Einrichtungen
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > D - Component properties
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > D - Component properties > Subproject D3: Function and fatigue of oxide electrodes in organic light emitting diodes
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > D - Component properties > Subproject D5: Processing and characterization of Li-Ion Thin film batteries
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres
DFG-Collaborative Research Centres (incl. Transregio)
Date Deposited: 16 Sep 2011 12:26
Official URL: http://dx.doi.org/10.1063/1.3380594
Additional Information:

SFB 595 Cooperation D3, D5

Identification Number: doi:10.1063/1.3380594
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