Genenko, Yuri A. (2008)
Space-charge mechanism of aging in ferroelectrics: An analytically solvable two-dimensional model.
In: Physical Review B, 78 (21)
doi: 10.1103/PhysRevB.78.214103
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
A mechanism of point defect migration triggered by local depolarization fields is shown to explain some still inexplicable features of aging in acceptor-doped ferroelectrics. A drift-diffusion model of the coupled charged defect transport and electrostatic field relaxation within a two-dimensional domain configuration is treated numerically and analytically. Numerical results are given for the emerging internal bias field of about 1 kV/mm which levels off at dopant concentrations well below 1 mol %; the fact, long ago known experimentally but still not explained. For higher defect concentrations a closed solution of the model equations in the drift approximation as well as an explicit formula for the internal bias field is derived revealing the plausible time, temperature, and concentration dependencies of aging. The results are compared to those due to the mechanism of orientational reordering of defect dipoles.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2008 |
| Autor(en): | Genenko, Yuri A. |
| Art des Eintrags: | Bibliographie |
| Titel: | Space-charge mechanism of aging in ferroelectrics: An analytically solvable two-dimensional model |
| Sprache: | Englisch |
| Publikationsjahr: | Dezember 2008 |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Physical Review B |
| Jahrgang/Volume einer Zeitschrift: | 78 |
| (Heft-)Nummer: | 21 |
| DOI: | 10.1103/PhysRevB.78.214103 |
| Kurzbeschreibung (Abstract): | A mechanism of point defect migration triggered by local depolarization fields is shown to explain some still inexplicable features of aging in acceptor-doped ferroelectrics. A drift-diffusion model of the coupled charged defect transport and electrostatic field relaxation within a two-dimensional domain configuration is treated numerically and analytically. Numerical results are given for the emerging internal bias field of about 1 kV/mm which levels off at dopant concentrations well below 1 mol %; the fact, long ago known experimentally but still not explained. For higher defect concentrations a closed solution of the model equations in the drift approximation as well as an explicit formula for the internal bias field is derived revealing the plausible time, temperature, and concentration dependencies of aging. The results are compared to those due to the mechanism of orientational reordering of defect dipoles. |
| Zusätzliche Informationen: | SFB 595 C5 |
| Fachbereich(e)/-gebiet(e): | DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > C - Modellierung > Teilprojekt C5: Phänomenologische Modellierung von Injektion, Transport und Rekombination in Bauelementen aus organischen Halbleitern sowie aus nichtorganischen Ferroelektrika DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > C - Modellierung DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung Zentrale Einrichtungen DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche DFG-Sonderforschungsbereiche (inkl. Transregio) |
| Hinterlegungsdatum: | 17 Aug 2011 11:59 |
| Letzte Änderung: | 05 Mär 2013 09:52 |
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