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Self-Consistent Phenomenological Theory of Charge Injection at the Conductor/Insulator Interface

Genenko, Yuri A. and Yampolskii, Sergey V. and Melzer, Christian and Seggern, Heinz von (2009):
Self-Consistent Phenomenological Theory of Charge Injection at the Conductor/Insulator Interface.
106, In: Integrated Ferroelectrics, (1), pp. 49-60, ISSN 1058-4587, [Online-Edition: http://dx.doi.org/10.1080/10584580903213225],
[Article]

Abstract

Self-consistent mean-field model of charge injection based on the matching of electric displacement and electrochemical potential in the electrode and the insulator is extended so as to account for discreteness of charge carriers. The improved scheme includes both the Schottky barrier lowering due to the individual image charge and the barrier change due to the field penetration into the injecting electrode. Applications of the theory to the cases of high-permittivity dielectric capacitors and organic light-emitting diodes are exemplarily presented.

Item Type: Article
Erschienen: 2009
Creators: Genenko, Yuri A. and Yampolskii, Sergey V. and Melzer, Christian and Seggern, Heinz von
Title: Self-Consistent Phenomenological Theory of Charge Injection at the Conductor/Insulator Interface
Language: English
Abstract:

Self-consistent mean-field model of charge injection based on the matching of electric displacement and electrochemical potential in the electrode and the insulator is extended so as to account for discreteness of charge carriers. The improved scheme includes both the Schottky barrier lowering due to the individual image charge and the barrier change due to the field penetration into the injecting electrode. Applications of the theory to the cases of high-permittivity dielectric capacitors and organic light-emitting diodes are exemplarily presented.

Journal or Publication Title: Integrated Ferroelectrics
Volume: 106
Number: 1
Divisions: DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > C - Modelling > Subproject C5: Phenomenological modelling of injection, transport and recombination in organic semiconducting devices as well as in inorganic ferroelectric materials
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > D - Component properties > Subproject D4: Fatigue of organic electronic devices
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > C - Modelling
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > D - Component properties
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue
Zentrale Einrichtungen
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres
DFG-Collaborative Research Centres (incl. Transregio)
Date Deposited: 17 Aug 2011 11:49
Official URL: http://dx.doi.org/10.1080/10584580903213225
Additional Information:

SFB 595 Cooperation C5, D4

Identification Number: doi:10.1080/10584580903213225
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