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Surface and bulk properties of sputter deposited undoped and Sb-doped SnO2 thin films

Körber, Christoph and Ágoston, Péter and Klein, Andreas (2009):
Surface and bulk properties of sputter deposited undoped and Sb-doped SnO2 thin films.
In: Sensors and Actuators B: Chemical, Elsevier Science Publishing Company, pp. 665-672, 139, (2), ISSN 09254005, [Online-Edition: http://dx.doi.org/10.1016/j.snb.2009.03.067],
[Article]

Abstract

Electronic surface and bulk properties of sputter deposited polycrystalline intrinsic and Sb-doped SnO2 thin films have been investigated by a combination of in situ photoelectron spectroscopy, electrical four-point conductivity, and optical transmission measurements. The work function and ionization potential of the polycrystalline films increase with increasing oxygen content in the sputter gas by not, vert, similar1.4 and not, vert, similar1 eV, respectively. The changes are explained by the different surface terminations known for single crystalline SnO2. Comparison of surface and bulk Fermi level positions indicates flat band situation for most cases but the presence of a depletion layer for Sb-doped films deposited under oxidizing conditions. Large changes of electrical conductivity depending on the oxygen content in the sputter gas were observed for undoped SnO2 which can be understood in terms of different concentrations of oxygen vacancies. In contrast, literally no changes occur for SnO2:Sb, which is attributed to the too high formation energy of compensating defects like oxygen interstitials or Sn vacancies.

Item Type: Article
Erschienen: 2009
Creators: Körber, Christoph and Ágoston, Péter and Klein, Andreas
Title: Surface and bulk properties of sputter deposited undoped and Sb-doped SnO2 thin films
Language: English
Abstract:

Electronic surface and bulk properties of sputter deposited polycrystalline intrinsic and Sb-doped SnO2 thin films have been investigated by a combination of in situ photoelectron spectroscopy, electrical four-point conductivity, and optical transmission measurements. The work function and ionization potential of the polycrystalline films increase with increasing oxygen content in the sputter gas by not, vert, similar1.4 and not, vert, similar1 eV, respectively. The changes are explained by the different surface terminations known for single crystalline SnO2. Comparison of surface and bulk Fermi level positions indicates flat band situation for most cases but the presence of a depletion layer for Sb-doped films deposited under oxidizing conditions. Large changes of electrical conductivity depending on the oxygen content in the sputter gas were observed for undoped SnO2 which can be understood in terms of different concentrations of oxygen vacancies. In contrast, literally no changes occur for SnO2:Sb, which is attributed to the too high formation energy of compensating defects like oxygen interstitials or Sn vacancies.

Journal or Publication Title: Sensors and Actuators B: Chemical
Volume: 139
Number: 2
Publisher: Elsevier Science Publishing Company
Uncontrolled Keywords: Tin oxide; Doping; Sputter deposition; Thin films; Surface potentials; Photoelectron spectroscopy; Electrical transport measurement
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Materials Modelling
11 Department of Materials and Earth Sciences > Material Science > Surface Science
Zentrale Einrichtungen
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > C - Modelling
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > C - Modelling > Subproject C2: Atomistic computer simulations of defects and their mobility in metal oxides
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > D - Component properties
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > D - Component properties > Subproject D3: Function and fatigue of oxide electrodes in organic light emitting diodes
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres
DFG-Collaborative Research Centres (incl. Transregio)
Date Deposited: 16 Aug 2011 15:33
Official URL: http://dx.doi.org/10.1016/j.snb.2009.03.067
Additional Information:

SFB 595 Cooperation C2, D3

Identification Number: doi:10.1016/j.snb.2009.03.067
Funders: The support of the German Science Foundation under Grant No. KL1225/4 and in the context of the Sonderforschungsbereich 595 (Electrical Fatigue of Functional Materials) is acknowledged.
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