Körber, Christoph ; Ágoston, Péter ; Klein, Andreas (2009)
Surface and bulk properties of sputter deposited undoped and Sb-doped SnO2 thin films.
In: Sensors and Actuators B: Chemical, 139 (2)
doi: 10.1016/j.snb.2009.03.067
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Electronic surface and bulk properties of sputter deposited polycrystalline intrinsic and Sb-doped SnO2 thin films have been investigated by a combination of in situ photoelectron spectroscopy, electrical four-point conductivity, and optical transmission measurements. The work function and ionization potential of the polycrystalline films increase with increasing oxygen content in the sputter gas by not, vert, similar1.4 and not, vert, similar1 eV, respectively. The changes are explained by the different surface terminations known for single crystalline SnO2. Comparison of surface and bulk Fermi level positions indicates flat band situation for most cases but the presence of a depletion layer for Sb-doped films deposited under oxidizing conditions. Large changes of electrical conductivity depending on the oxygen content in the sputter gas were observed for undoped SnO2 which can be understood in terms of different concentrations of oxygen vacancies. In contrast, literally no changes occur for SnO2:Sb, which is attributed to the too high formation energy of compensating defects like oxygen interstitials or Sn vacancies.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2009 |
| Autor(en): | Körber, Christoph ; Ágoston, Péter ; Klein, Andreas |
| Art des Eintrags: | Bibliographie |
| Titel: | Surface and bulk properties of sputter deposited undoped and Sb-doped SnO2 thin films |
| Sprache: | Englisch |
| Publikationsjahr: | 4 Juni 2009 |
| Verlag: | Elsevier Science Publishing Company |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Sensors and Actuators B: Chemical |
| Jahrgang/Volume einer Zeitschrift: | 139 |
| (Heft-)Nummer: | 2 |
| DOI: | 10.1016/j.snb.2009.03.067 |
| Kurzbeschreibung (Abstract): | Electronic surface and bulk properties of sputter deposited polycrystalline intrinsic and Sb-doped SnO2 thin films have been investigated by a combination of in situ photoelectron spectroscopy, electrical four-point conductivity, and optical transmission measurements. The work function and ionization potential of the polycrystalline films increase with increasing oxygen content in the sputter gas by not, vert, similar1.4 and not, vert, similar1 eV, respectively. The changes are explained by the different surface terminations known for single crystalline SnO2. Comparison of surface and bulk Fermi level positions indicates flat band situation for most cases but the presence of a depletion layer for Sb-doped films deposited under oxidizing conditions. Large changes of electrical conductivity depending on the oxygen content in the sputter gas were observed for undoped SnO2 which can be understood in terms of different concentrations of oxygen vacancies. In contrast, literally no changes occur for SnO2:Sb, which is attributed to the too high formation energy of compensating defects like oxygen interstitials or Sn vacancies. |
| Freie Schlagworte: | Tin oxide; Doping; Sputter deposition; Thin films; Surface potentials; Photoelectron spectroscopy; Electrical transport measurement |
| Zusätzliche Informationen: | SFB 595 Cooperation C2, D3 |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Materialmodellierung 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung Zentrale Einrichtungen DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > C - Modellierung DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > C - Modellierung > Teilprojekt C2: Atomistische Computersimulationen von Defekten und deren Bewegung in Metalloxiden DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > D - Bauteileigenschaften DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > D - Bauteileigenschaften > Teilprojekt D3: Funktion und Ermüdung oxidischer Elektroden in organischen Leuchtdioden 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche DFG-Sonderforschungsbereiche (inkl. Transregio) |
| Hinterlegungsdatum: | 16 Aug 2011 15:33 |
| Letzte Änderung: | 25 Mär 2015 21:12 |
| PPN: | |
| Sponsoren: | The support of the German Science Foundation under Grant No. KL1225/4 and in the context of the Sonderforschungsbereich 595 (Electrical Fatigue of Functional Materials) is acknowledged. |
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