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Ab initio modeling of diffusion in indium oxide

Agoston, Peter ; Albe, Karsten (2010)
Ab initio modeling of diffusion in indium oxide.
In: Physical Review B, 81 (19)
doi: 10.1103/PhysRevB.81.195205
Artikel, Bibliographie

Kurzbeschreibung (Abstract)

Migration barriers of intrinsic defects in cubic indium oxide are calculated by means of first-principles calculations within density-functional theory using the nudged-elastic-band method. Within the open C-type (bixbyite) structure of In2O3 there is a large variety of distinct migration paths involving the fourth-neighbor shell. Effective migration energies and diffusion length are calculated by means of kinetic Monte Carlo simulations. We show that cation barriers have generally higher migration energies as compared to oxygen defects, which diffuse via correlated jumps. Moreover, there are distinct diffusion paths for anion and cation interstitials while structural vacancies within the bixbyite structure do not give rise to an enhanced diffusion.

Typ des Eintrags: Artikel
Erschienen: 2010
Autor(en): Agoston, Peter ; Albe, Karsten
Art des Eintrags: Bibliographie
Titel: Ab initio modeling of diffusion in indium oxide
Sprache: Englisch
Publikationsjahr: 7 Mai 2010
Verlag: American Physical Society
Titel der Zeitschrift, Zeitung oder Schriftenreihe: Physical Review B
Jahrgang/Volume einer Zeitschrift: 81
(Heft-)Nummer: 19
DOI: 10.1103/PhysRevB.81.195205
Kurzbeschreibung (Abstract):

Migration barriers of intrinsic defects in cubic indium oxide are calculated by means of first-principles calculations within density-functional theory using the nudged-elastic-band method. Within the open C-type (bixbyite) structure of In2O3 there is a large variety of distinct migration paths involving the fourth-neighbor shell. Effective migration energies and diffusion length are calculated by means of kinetic Monte Carlo simulations. We show that cation barriers have generally higher migration energies as compared to oxygen defects, which diffuse via correlated jumps. Moreover, there are distinct diffusion paths for anion and cation interstitials while structural vacancies within the bixbyite structure do not give rise to an enhanced diffusion.

Zusätzliche Informationen:

SFB 595 C2

Fachbereich(e)/-gebiet(e): 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Materialmodellierung
Zentrale Einrichtungen
DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung
DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > C - Modellierung
DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche > SFB 595: Elektrische Ermüdung > C - Modellierung > Teilprojekt C2: Atomistische Computersimulationen von Defekten und deren Bewegung in Metalloxiden
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft
11 Fachbereich Material- und Geowissenschaften
DFG-Sonderforschungsbereiche (inkl. Transregio) > Sonderforschungsbereiche
DFG-Sonderforschungsbereiche (inkl. Transregio)
Hinterlegungsdatum: 16 Aug 2011 12:39
Letzte Änderung: 05 Mär 2013 09:51
PPN:
Sponsoren: We acknowledge the financial support through the Sonderforschungsbereich 595 “Fatigue of functional materials” of the Deutsche Forschungsgemeinschaft., Moreover, this work was made possible by grants for computing time on HHLR supercomputers at HRZ and FZ Juelich., We also acknowledge financial support through a bilateral travel program funded by the German foreign exchange server �DAAD�.
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