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Energy band alignment between Pb(Zr,Ti)O3 and high and low work function conducting oxides — from hole to electron injection

Chen, F. and Schafranek, R. and Li, S. and Wu, W. B. and Klein, Andreas (2010):
Energy band alignment between Pb(Zr,Ti)O3 and high and low work function conducting oxides — from hole to electron injection.
In: Journal of Physics D: Applied Physics, pp. 295301-1, 43, (29), ISSN 0022-3727,
[Online-Edition: http://dx.doi.org/10.1088/0022-3727/43/29/295301],
[Article]

Abstract

The interface formation between Pb(Zr,Ti)O(3) (PZT) and RuO(2) and between PZT and In(2)O(3) : Sn (ITO), respectively, was characterized using in situ x-ray photoelectron spectroscopy (XPS). No interface reaction was observed for the interfaces studied. The Fermi level position at the interface (Schottky barrier height) is strongly different for the two electrode materials. A Fermi level position of 1.0 +/- 0.1 eV above the valence band maximum (VBM) is observed for the contact between PZT and the high work function oxide RuO(2). For the contact between PZT and the low work function oxide ITO a Fermi level position of 2.1 +/- 0.2 eV above the VBM is found.

Item Type: Article
Erschienen: 2010
Creators: Chen, F. and Schafranek, R. and Li, S. and Wu, W. B. and Klein, Andreas
Title: Energy band alignment between Pb(Zr,Ti)O3 and high and low work function conducting oxides — from hole to electron injection
Language: English
Abstract:

The interface formation between Pb(Zr,Ti)O(3) (PZT) and RuO(2) and between PZT and In(2)O(3) : Sn (ITO), respectively, was characterized using in situ x-ray photoelectron spectroscopy (XPS). No interface reaction was observed for the interfaces studied. The Fermi level position at the interface (Schottky barrier height) is strongly different for the two electrode materials. A Fermi level position of 1.0 +/- 0.1 eV above the valence band maximum (VBM) is observed for the contact between PZT and the high work function oxide RuO(2). For the contact between PZT and the low work function oxide ITO a Fermi level position of 2.1 +/- 0.2 eV above the VBM is found.

Journal or Publication Title: Journal of Physics D: Applied Physics
Volume: 43
Number: 29
Uncontrolled Keywords: RAY PHOTOELECTRON-SPECTROSCOPY; FERROELECTRIC THIN-FILMS; BARRIER HEIGHTS; LEAD TITANATE; FATIGUE; PHOTOEMISSION; FABRICATION; CAPACITORS; H-2
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Surface Science
Zentrale Einrichtungen
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > B - Characterisation
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > B - Characterisation > Subproject B7: Polarisation and charging in electrical fatigue ferroelectrics
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres
DFG-Collaborative Research Centres (incl. Transregio)
Date Deposited: 15 Aug 2011 12:32
Official URL: http://dx.doi.org/10.1088/0022-3727/43/29/295301
Additional Information:

SFB 595 B7

Identification Number: doi:10.1088/0022-3727/43/29/295301
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