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Defect structure of oxide ferroelectrics—valence state, site of incorporation, mechanisms of charge compensation and internal bias fields

Eichel, Rüdiger-A. (2007):
Defect structure of oxide ferroelectrics—valence state, site of incorporation, mechanisms of charge compensation and internal bias fields.
19, In: Journal of Electroceramics, (1), pp. 11-23, ISSN 1385-3449, [Online-Edition: http://dx.doi.org/10.1007/s10832-007-9068-8],
[Article]

Abstract

The defect structure of aliovalent transition-metal and rare-earth functional centers in ferroelectric perovskite oxides is characterized by means of multifrequency electron paramagnetic resonance spectroscopy, assisted by density-functional theory calculations. The review is mainly focused on lead zirconate titanate (Pb[Zr x Ti1−x ]O3, PZT) compounds. However, where available also results on ferroelectric ’lead-free’ compounds are discussed. The results include the formation of charged (FeZrTi−VO) defect dipoles, causing internal bias fields, multivalence manganese centers, acceptor-type copper functional centers creating isolated oxygen vacancies that promote ionic conductivity, as well as GdPb donor-type centers. Moreover, the impact of the defect structure on macroscopic material properties is discussed.

Item Type: Article
Erschienen: 2007
Creators: Eichel, Rüdiger-A.
Title: Defect structure of oxide ferroelectrics—valence state, site of incorporation, mechanisms of charge compensation and internal bias fields
Language: English
Abstract:

The defect structure of aliovalent transition-metal and rare-earth functional centers in ferroelectric perovskite oxides is characterized by means of multifrequency electron paramagnetic resonance spectroscopy, assisted by density-functional theory calculations. The review is mainly focused on lead zirconate titanate (Pb[Zr x Ti1−x ]O3, PZT) compounds. However, where available also results on ferroelectric ’lead-free’ compounds are discussed. The results include the formation of charged (FeZrTi−VO) defect dipoles, causing internal bias fields, multivalence manganese centers, acceptor-type copper functional centers creating isolated oxygen vacancies that promote ionic conductivity, as well as GdPb donor-type centers. Moreover, the impact of the defect structure on macroscopic material properties is discussed.

Journal or Publication Title: Journal of Electroceramics
Volume: 19
Number: 1
Uncontrolled Keywords: Ferroelectrics - Lead zirconate titanate - PZT - Doping - Defect structure - Valence state - Site of incorporation - Charge compensation - Internal bias fields - Aging - Fatigue - EPR
Divisions: DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > B - Characterisation
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > B - Characterisation > Subproject B1: EPR-Investigations of defects in ferroelectric ceramic material
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue
Zentrale Einrichtungen
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres
DFG-Collaborative Research Centres (incl. Transregio)
Date Deposited: 08 Aug 2011 14:13
Official URL: http://dx.doi.org/10.1007/s10832-007-9068-8
Additional Information:

SFB 595 B1

Identification Number: doi:10.1007/s10832-007-9068-8
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