Chung, Yung-Bin ; Park, Hyung-Ki ; Lee, Dong-Kwon ; Jo, Wook ; Song, Jean-Ho ; Lee, Sang-Hoon ; Hwang, Nong-Moon (2011)
Low temperature deposition of crystalline silicon on glass by hot wire chemical vapor deposition.
In: Journal of Crystal Growth, 327 (1)
doi: 10.1016/j.jcrysgro.2011.05.004
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Although the deposition of crystalline silicon on a glass substrate has been pursued using hot wire chemical vapor deposition or plasma enhanced chemical vapor deposition for applications in flat panel displays and solar cells, the process has been only partly successful because of the inevitable formation of an amorphous incubation layer on a glass substrate. Currently, the crystalline silicon films are prepared by depositing an amorphous silicon film on a glass substrate and then crystallizing it by excimer laser annealing (ELA), metal induced crystallization or rapid thermal annealing (RTA). Here we report a new process, which can remove the amorphous incubation layer and thereby deposit crystalline silicon directly on glass using HCl. The intrinsic crystalline silicon film has a conductivity of 3.7×10−5 Scm−1 and the n-type doped crystalline silicon film has the Hall mobility of 15.8 cm2V−1 s−1, whose values are comparable to those prepared by ELA and RTA, respectively.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2011 |
| Autor(en): | Chung, Yung-Bin ; Park, Hyung-Ki ; Lee, Dong-Kwon ; Jo, Wook ; Song, Jean-Ho ; Lee, Sang-Hoon ; Hwang, Nong-Moon |
| Art des Eintrags: | Bibliographie |
| Titel: | Low temperature deposition of crystalline silicon on glass by hot wire chemical vapor deposition |
| Sprache: | Englisch |
| Publikationsjahr: | Juli 2011 |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Journal of Crystal Growth |
| Jahrgang/Volume einer Zeitschrift: | 327 |
| (Heft-)Nummer: | 1 |
| DOI: | 10.1016/j.jcrysgro.2011.05.004 |
| Kurzbeschreibung (Abstract): | Although the deposition of crystalline silicon on a glass substrate has been pursued using hot wire chemical vapor deposition or plasma enhanced chemical vapor deposition for applications in flat panel displays and solar cells, the process has been only partly successful because of the inevitable formation of an amorphous incubation layer on a glass substrate. Currently, the crystalline silicon films are prepared by depositing an amorphous silicon film on a glass substrate and then crystallizing it by excimer laser annealing (ELA), metal induced crystallization or rapid thermal annealing (RTA). Here we report a new process, which can remove the amorphous incubation layer and thereby deposit crystalline silicon directly on glass using HCl. The intrinsic crystalline silicon film has a conductivity of 3.7×10−5 Scm−1 and the n-type doped crystalline silicon film has the Hall mobility of 15.8 cm2V−1 s−1, whose values are comparable to those prepared by ELA and RTA, respectively. |
| Freie Schlagworte: | Chemicalvapordepositionprocesses; Polycrystallinedeposition; Semiconductingsilicon; Solarcells |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Nichtmetallisch-Anorganische Werkstoffe 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften |
| Hinterlegungsdatum: | 27 Jul 2011 13:40 |
| Letzte Änderung: | 05 Mär 2013 09:51 |
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