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Low temperature deposition of crystalline silicon on glass by hot wire chemical vapor deposition

Chung, Yung-Bin and Park, Hyung-Ki and Lee, Dong-Kwon and Jo, Wook and Song, Jean-Ho and Lee, Sang-Hoon and Hwang, Nong-Moon (2011):
Low temperature deposition of crystalline silicon on glass by hot wire chemical vapor deposition.
In: Journal of Crystal Growth, pp. 57-62, 327, (1), ISSN 00220248, [Online-Edition: http://dx.doi.org/10.1016/j.jcrysgro.2011.05.004],
[Article]

Abstract

Although the deposition of crystalline silicon on a glass substrate has been pursued using hot wire chemical vapor deposition or plasma enhanced chemical vapor deposition for applications in flat panel displays and solar cells, the process has been only partly successful because of the inevitable formation of an amorphous incubation layer on a glass substrate. Currently, the crystalline silicon films are prepared by depositing an amorphous silicon film on a glass substrate and then crystallizing it by excimer laser annealing (ELA), metal induced crystallization or rapid thermal annealing (RTA). Here we report a new process, which can remove the amorphous incubation layer and thereby deposit crystalline silicon directly on glass using HCl. The intrinsic crystalline silicon film has a conductivity of 3.7×10−5 Scm−1 and the n-type doped crystalline silicon film has the Hall mobility of 15.8 cm2V−1 s−1, whose values are comparable to those prepared by ELA and RTA, respectively.

Item Type: Article
Erschienen: 2011
Creators: Chung, Yung-Bin and Park, Hyung-Ki and Lee, Dong-Kwon and Jo, Wook and Song, Jean-Ho and Lee, Sang-Hoon and Hwang, Nong-Moon
Title: Low temperature deposition of crystalline silicon on glass by hot wire chemical vapor deposition
Language: English
Abstract:

Although the deposition of crystalline silicon on a glass substrate has been pursued using hot wire chemical vapor deposition or plasma enhanced chemical vapor deposition for applications in flat panel displays and solar cells, the process has been only partly successful because of the inevitable formation of an amorphous incubation layer on a glass substrate. Currently, the crystalline silicon films are prepared by depositing an amorphous silicon film on a glass substrate and then crystallizing it by excimer laser annealing (ELA), metal induced crystallization or rapid thermal annealing (RTA). Here we report a new process, which can remove the amorphous incubation layer and thereby deposit crystalline silicon directly on glass using HCl. The intrinsic crystalline silicon film has a conductivity of 3.7×10−5 Scm−1 and the n-type doped crystalline silicon film has the Hall mobility of 15.8 cm2V−1 s−1, whose values are comparable to those prepared by ELA and RTA, respectively.

Journal or Publication Title: Journal of Crystal Growth
Volume: 327
Number: 1
Uncontrolled Keywords: Chemicalvapordepositionprocesses; Polycrystallinedeposition; Semiconductingsilicon; Solarcells
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Nonmetallic-Inorganic Materials
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 27 Jul 2011 13:40
Official URL: http://dx.doi.org/10.1016/j.jcrysgro.2011.05.004
Identification Number: doi:10.1016/j.jcrysgro.2011.05.004
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