Han, Junfeng ; Fan, Chunjie ; Spanheimer, Christina ; Fu, Ganhua ; Zhao, Kui ; Klein, Andreas ; Jaegermann, Wolfram (2010)
Electrical properties of the CdTe back contact: A new chemically etching process based on nitric acid/acetic acid mixtures.
In: Applied Surface Science, 256
doi: 10.1016/j.apsusc.2010.01.087
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
The performance of the back contact is one of the major issues of CdTe solar cell research. Standard nitric-phosphric (NP) acid chemical etching before metallization is widely used to improve contact formation. However, previous studies of this traditional etching method indicated a blocking Shottky barrier at the back contact, and a roll-over phenomenon was found in the J-V curves of the CdTe solar cells. In this work, a new etching solution, i.e., a nitric-acetic (NA) acid was employed. The etching rate was slow and a Te rich layer was formed on the surface, which was less than 1 nm. The CdTe solar cell with this new etching method showed no roll-over phenomenon and displayed a good ohmic back contact performance. XPS analysis demonstrated that the back contact barrier height was close to those of CdTe with standard NP etching. A possible mechanism was presented for the improvement of back contact properties.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2010 |
| Autor(en): | Han, Junfeng ; Fan, Chunjie ; Spanheimer, Christina ; Fu, Ganhua ; Zhao, Kui ; Klein, Andreas ; Jaegermann, Wolfram |
| Art des Eintrags: | Bibliographie |
| Titel: | Electrical properties of the CdTe back contact: A new chemically etching process based on nitric acid/acetic acid mixtures |
| Sprache: | Englisch |
| Publikationsjahr: | 2010 |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Applied Surface Science |
| Jahrgang/Volume einer Zeitschrift: | 256 |
| DOI: | 10.1016/j.apsusc.2010.01.087 |
| Kurzbeschreibung (Abstract): | The performance of the back contact is one of the major issues of CdTe solar cell research. Standard nitric-phosphric (NP) acid chemical etching before metallization is widely used to improve contact formation. However, previous studies of this traditional etching method indicated a blocking Shottky barrier at the back contact, and a roll-over phenomenon was found in the J-V curves of the CdTe solar cells. In this work, a new etching solution, i.e., a nitric-acetic (NA) acid was employed. The etching rate was slow and a Te rich layer was formed on the surface, which was less than 1 nm. The CdTe solar cell with this new etching method showed no roll-over phenomenon and displayed a good ohmic back contact performance. XPS analysis demonstrated that the back contact barrier height was close to those of CdTe with standard NP etching. A possible mechanism was presented for the improvement of back contact properties. |
| Zusätzliche Informationen: | Material- und Geowissenschaften |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung |
| Hinterlegungsdatum: | 29 Okt 2011 08:06 |
| Letzte Änderung: | 29 Jan 2019 09:36 |
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