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Domain switching mechanisms in polycrystalline ferroelectrics with asymmetric hysteretic behavior

Anton, Eva-Maria ; Garcia, R. Edwin ; Key, Thomas S. ; Blendell, John E. ; Bowman, Keith J. :
Domain switching mechanisms in polycrystalline ferroelectrics with asymmetric hysteretic behavior.
[Online-Edition: http://dx.doi.org/10.1063/1.3068333]
In: Journal of Applied Physics, 105 (2) 024107-1-024107-8. ISSN 00218979
[Artikel], (2009)

Offizielle URL: http://dx.doi.org/10.1063/1.3068333

Kurzbeschreibung (Abstract)

A numerical method is presented to predict the effect of microstructure on the local polarization switching of bulk ferroelectric ceramics. The model shows that a built-in electromechanical field develops in a ferroelectric material as a result of the spatial coupling of the grains and the direct physical coupling between the thermomechanical and electromechanical properties of a bulk ceramic material. The built-in fields that result from the thermomechanically induced grain-grain electromechanical interactions result in the appearance of four microstructural switching mechanisms: (1) simple switching, where the c-axes of ferroelectric domains will align with the direction of the applied macroscopic electric field by starting from the core of each grain; (2) grain boundary induced switching, where the domain's switching response will initiate at grain corners and boundaries as a result of the polarization and stress that is locally generated from the strong anisotropy of the dielectric permittivity and the local piezoelectric contributions to polarization from the surrounding material; (3) negative poling, where abutting ferroelectric domains of opposite polarity actively oppose domain switching by increasing their degree of tetragonality by interacting with the surrounding domains that have already switched to align with the applied electrostatic field. Finally, (4) domain reswitching mechanism is observed at very large applied electric fields, and is characterized by the appearance of polarization domain reversals events in the direction of their originally unswitched state. This mechanism is a consequence of the competition between the macroscopic applied electric field, and the induced electric field that results from the neighboring domains (or grains) interactions. The model shows that these built-in electromechanical fields and mesoscale mechanisms contribute to the asymmetry of the macroscopic hysteretic behavior in poled samples. Furthermore, below a material-dependent operating temperature, the predicted built-in electric fields can potentially drive the aging and electrical fatigue of the system to further skew the shape of the hysteresis loops.

Typ des Eintrags: Artikel
Erschienen: 2009
Autor(en): Anton, Eva-Maria ; Garcia, R. Edwin ; Key, Thomas S. ; Blendell, John E. ; Bowman, Keith J.
Titel: Domain switching mechanisms in polycrystalline ferroelectrics with asymmetric hysteretic behavior
Sprache: Englisch
Kurzbeschreibung (Abstract):

A numerical method is presented to predict the effect of microstructure on the local polarization switching of bulk ferroelectric ceramics. The model shows that a built-in electromechanical field develops in a ferroelectric material as a result of the spatial coupling of the grains and the direct physical coupling between the thermomechanical and electromechanical properties of a bulk ceramic material. The built-in fields that result from the thermomechanically induced grain-grain electromechanical interactions result in the appearance of four microstructural switching mechanisms: (1) simple switching, where the c-axes of ferroelectric domains will align with the direction of the applied macroscopic electric field by starting from the core of each grain; (2) grain boundary induced switching, where the domain's switching response will initiate at grain corners and boundaries as a result of the polarization and stress that is locally generated from the strong anisotropy of the dielectric permittivity and the local piezoelectric contributions to polarization from the surrounding material; (3) negative poling, where abutting ferroelectric domains of opposite polarity actively oppose domain switching by increasing their degree of tetragonality by interacting with the surrounding domains that have already switched to align with the applied electrostatic field. Finally, (4) domain reswitching mechanism is observed at very large applied electric fields, and is characterized by the appearance of polarization domain reversals events in the direction of their originally unswitched state. This mechanism is a consequence of the competition between the macroscopic applied electric field, and the induced electric field that results from the neighboring domains (or grains) interactions. The model shows that these built-in electromechanical fields and mesoscale mechanisms contribute to the asymmetry of the macroscopic hysteretic behavior in poled samples. Furthermore, below a material-dependent operating temperature, the predicted built-in electric fields can potentially drive the aging and electrical fatigue of the system to further skew the shape of the hysteresis loops.

Titel der Zeitschrift, Zeitung oder Schriftenreihe: Journal of Applied Physics
Band: 105
(Heft-)Nummer: 2
Freie Schlagworte: ageing; dielectric hysteresis; dielectric polarisation; electric domains; ferroelectric ceramics; ferroelectric switching; grain boundaries; lead compounds; permittivity; piezoceramics; piezoelectricity
Fachbereich(e)/-gebiet(e): Fachbereich Material- und Geowissenschaften > Materialwissenschaften > Nichtmetallisch-Anorganische Werkstoffe
Fachbereich Material- und Geowissenschaften > Materialwissenschaften
Fachbereich Material- und Geowissenschaften
Hinterlegungsdatum: 18 Mai 2011 15:20
Offizielle URL: http://dx.doi.org/10.1063/1.3068333
ID-Nummer: 10.1063/1.3068333
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