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Ion beam assisted deposition of nitrogen-containing chromium films: A comparison of argon vs nitrogen ions

Ensinger, Wolfgang ; Kiuchi, M. (2009)
Ion beam assisted deposition of nitrogen-containing chromium films: A comparison of argon vs nitrogen ions.
In: Surface and Coatings Technology, 203 (17-18)
Artikel, Bibliographie

Kurzbeschreibung (Abstract)

Chromium films were deposited onto different substrates by two ion beam assisted deposition techniques, one being based on nitrogen ion implantation, the other one being based on nitrogen gas sorption under rare gas ion irradiation. In both cases, a residual gas atmosphere of nitrogen was used. In the first case, nitrogen was both implanted and absorbed from the atmosphere, in the second case, it was only absorbed under the influence of rare gas ion irradiation. In dependence on ion irradiation intensity, the films consist of phase mixtures of nitrogen-containing chromium, di-chromium nitride and chromium nitride. Nitrogen content of the films is a function of both ionic species and ion irradiation intensity. In case of nitrogen irradiation, always more nitrogen is incorporated than for the argon ion case. Under moderate ion irradiation, the surface morphology of the films is almost the same for both, under intense irradiation, argon ion bombardment leads to larger grains.

Typ des Eintrags: Artikel
Erschienen: 2009
Autor(en): Ensinger, Wolfgang ; Kiuchi, M.
Art des Eintrags: Bibliographie
Titel: Ion beam assisted deposition of nitrogen-containing chromium films: A comparison of argon vs nitrogen ions
Sprache: Englisch
Publikationsjahr: 15 Juni 2009
Verlag: Elsevier Science Publishing Company
Titel der Zeitschrift, Zeitung oder Schriftenreihe: Surface and Coatings Technology
Jahrgang/Volume einer Zeitschrift: 203
(Heft-)Nummer: 17-18
URL / URN: http://www.sciencedirect.com/science/article/B6TVV-4VT0WYP-1...
Kurzbeschreibung (Abstract):

Chromium films were deposited onto different substrates by two ion beam assisted deposition techniques, one being based on nitrogen ion implantation, the other one being based on nitrogen gas sorption under rare gas ion irradiation. In both cases, a residual gas atmosphere of nitrogen was used. In the first case, nitrogen was both implanted and absorbed from the atmosphere, in the second case, it was only absorbed under the influence of rare gas ion irradiation. In dependence on ion irradiation intensity, the films consist of phase mixtures of nitrogen-containing chromium, di-chromium nitride and chromium nitride. Nitrogen content of the films is a function of both ionic species and ion irradiation intensity. In case of nitrogen irradiation, always more nitrogen is incorporated than for the argon ion case. Under moderate ion irradiation, the surface morphology of the films is almost the same for both, under intense irradiation, argon ion bombardment leads to larger grains.

Freie Schlagworte: Chromium nitride, Dynamic ion beam mixing, Ion beam assisted deposition (IBAD), Scanning tunneling microscopy
Fachbereich(e)/-gebiet(e): 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Materialanalytik
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft
11 Fachbereich Material- und Geowissenschaften
Hinterlegungsdatum: 15 Jul 2009 12:51
Letzte Änderung: 05 Mär 2013 09:20
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