Baba, Koumei ; Hatada, Ruriko ; Flege, Stefan ; Ensinger, Wolfgang (2009)
Deposition of silicon-containing diamond-like carbon films by plasma-enhanced chemical vapour deposition.
In: Surface and Coatings Technology, 203 (17-18)
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Silicon-containing diamond-like carbon (Si-DLC) films were prepared on silicon wafer substrates by DC glow discharge. Acetylene and mixture with tetramethylsilane gases were used as working gases for the plasma. A negative DC voltage was applied to the substrate holder. The DC voltage was changed in the range from − 1 kV to − 4 kV. The surface morphology of the films and the film thickness were observed by scanning electron microscopy. The compositions of the Si-containing DLC films were examined by X-ray photoelectron spectroscopy. The film structure was characterized by Raman spectroscopy. A ball-on-disc test with 2 N load was employed to obtain information about the friction properties and sliding wear resistance of the films. The films were annealed at 723 K, 773 K and 873 K in ambient air for 30 min in order to estimate the thermal stability of the DLC films. The surface roughness of the Si-containing DLC films was very low and no special structure was observed. The deposition rate increased linearly with Si content. The positions of D- and G-bands in Raman spectra decreased with Si content. The integrated intensity ratios ID/IG of the Si-containing DLC films decreased with Si content. A very low friction coefficient of 0.03 was obtained for a 24 at.% Si-containing DLC film. The heat resistivity of DLC films can be improved by Si addition into the DLC films.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2009 |
| Autor(en): | Baba, Koumei ; Hatada, Ruriko ; Flege, Stefan ; Ensinger, Wolfgang |
| Art des Eintrags: | Bibliographie |
| Titel: | Deposition of silicon-containing diamond-like carbon films by plasma-enhanced chemical vapour deposition |
| Sprache: | Englisch |
| Publikationsjahr: | 15 Juni 2009 |
| Verlag: | Elsevier |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Surface and Coatings Technology |
| Jahrgang/Volume einer Zeitschrift: | 203 |
| (Heft-)Nummer: | 17-18 |
| URL / URN: | http://www.sciencedirect.com/science/article/B6TVV-4VT0WYP-6... |
| Kurzbeschreibung (Abstract): | Silicon-containing diamond-like carbon (Si-DLC) films were prepared on silicon wafer substrates by DC glow discharge. Acetylene and mixture with tetramethylsilane gases were used as working gases for the plasma. A negative DC voltage was applied to the substrate holder. The DC voltage was changed in the range from − 1 kV to − 4 kV. The surface morphology of the films and the film thickness were observed by scanning electron microscopy. The compositions of the Si-containing DLC films were examined by X-ray photoelectron spectroscopy. The film structure was characterized by Raman spectroscopy. A ball-on-disc test with 2 N load was employed to obtain information about the friction properties and sliding wear resistance of the films. The films were annealed at 723 K, 773 K and 873 K in ambient air for 30 min in order to estimate the thermal stability of the DLC films. The surface roughness of the Si-containing DLC films was very low and no special structure was observed. The deposition rate increased linearly with Si content. The positions of D- and G-bands in Raman spectra decreased with Si content. The integrated intensity ratios ID/IG of the Si-containing DLC films decreased with Si content. A very low friction coefficient of 0.03 was obtained for a 24 at.% Si-containing DLC film. The heat resistivity of DLC films can be improved by Si addition into the DLC films. |
| Freie Schlagworte: | DLC; Silicon incorporation; Raman spectroscopy; Friction coefficient |
| Zusätzliche Informationen: | SMMIB-15, 15th International Conference on Surface Modification of Materials by Ion Beams |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Materialanalytik 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften |
| Hinterlegungsdatum: | 06 Jul 2009 13:49 |
| Letzte Änderung: | 05 Mär 2013 09:20 |
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