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High-barrier Schottky contacts on N-InP using damage-free electrochemical metallization

Dumka, D. C. and Riemenschneider, and Hartnagel, (1995):
High-barrier Schottky contacts on N-InP using damage-free electrochemical metallization.
In: Workshop on Compound Semiconductor Devices and Integrated Circuits: WOCSDICE <19, 1995, Stockholm, Schweden>: Abstracts, [Conference or Workshop Item]

Item Type: Conference or Workshop Item
Erschienen: 1995
Creators: Dumka, D. C. and Riemenschneider, and Hartnagel,
Title: High-barrier Schottky contacts on N-InP using damage-free electrochemical metallization
Language: English
Series Name: Workshop on Compound Semiconductor Devices and Integrated Circuits: WOCSDICE <19, 1995, Stockholm, Schweden>: Abstracts
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Microwave Electronics
Date Deposited: 19 Nov 2008 15:58
License: [undefiniert]
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