Sessler, Gerhard M. ; Yang, G. M. (1995)
Charge transport in Teflon and Kapton.
Conference on Electrical Insulation and Dielectric Phenomena, (CEIDP). Arlington, TX (22.10.1995-25.10.1995)
doi: 10.1109/CEIDP.1995.483804
Konferenzveröffentlichung, Bibliographie
Kurzbeschreibung (Abstract)
Teflon and Kapton films of 25 /spl mu/m thickness are charged with 30 keV and 20 keV electron beams, respectively, to charge densities of 100 nC/cm/sup 2/. Thereafter, the charge distribution in the depth direction and its change with time at 120/spl deg/C are measured with the laser-induced pressure-pulse (LIPP) method. A theoretical model of charge buildup during electron-beam irradiation and charge transport thereafter, considering the charge deposition and dose profiles, the radiation-induced conductivity and the carrier mobility is used to interpret the experimental data. While the charge transport at room temperature is mostly due to the direct and delayed radiation-induced conductivity and is therefore limited to the volume penetrated by the electron beam, charge motion at elevated temperatures is also caused by increased carrier mobility in the nonirradiated volume. Evaluations yield numerical values for the charge transport parameters, such as Schubweg, mobility-lifetime product, and trap density.
| Typ des Eintrags: | Konferenzveröffentlichung |
|---|---|
| Erschienen: | 1995 |
| Autor(en): | Sessler, Gerhard M. ; Yang, G. M. |
| Art des Eintrags: | Bibliographie |
| Titel: | Charge transport in Teflon and Kapton |
| Sprache: | Englisch |
| Publikationsjahr: | 1995 |
| Ort: | New York, NY |
| Verlag: | IEEE |
| Buchtitel: | Proceedings of 1995 Conference on Electrical Insulation and Dielectric Phenomena |
| Veranstaltungstitel: | Conference on Electrical Insulation and Dielectric Phenomena, (CEIDP) |
| Veranstaltungsort: | Arlington, TX |
| Veranstaltungsdatum: | 22.10.1995-25.10.1995 |
| DOI: | 10.1109/CEIDP.1995.483804 |
| Zugehörige Links: | |
| Kurzbeschreibung (Abstract): | Teflon and Kapton films of 25 /spl mu/m thickness are charged with 30 keV and 20 keV electron beams, respectively, to charge densities of 100 nC/cm/sup 2/. Thereafter, the charge distribution in the depth direction and its change with time at 120/spl deg/C are measured with the laser-induced pressure-pulse (LIPP) method. A theoretical model of charge buildup during electron-beam irradiation and charge transport thereafter, considering the charge deposition and dose profiles, the radiation-induced conductivity and the carrier mobility is used to interpret the experimental data. While the charge transport at room temperature is mostly due to the direct and delayed radiation-induced conductivity and is therefore limited to the volume penetrated by the electron beam, charge motion at elevated temperatures is also caused by increased carrier mobility in the nonirradiated volume. Evaluations yield numerical values for the charge transport parameters, such as Schubweg, mobility-lifetime product, and trap density. |
| Fachbereich(e)/-gebiet(e): | 18 Fachbereich Elektrotechnik und Informationstechnik |
| Hinterlegungsdatum: | 19 Nov 2008 15:58 |
| Letzte Änderung: | 22 Okt 2024 11:12 |
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