Baba, Koumei ; Hatada, Ruriko ; Flege, Stefan ; Kraft, Gunther ; Ensinger, Wolfgang (2007)
Formation of thin carbide films of titanium and tantalum by methane plasma immersion ion implantation.
In: Nuclear Instruments and Methods in Physics Research Section B, 257 (1-2)
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Titanium and tantalum samples were treated by high voltage pulses at −20 kV in an atmosphere of methane. The high voltage created a plasma, from which ions of methane and its fragments were accelerated towards the sample and were implanted. Process times between 0.5 and 2 h at a pulse repetition rate of 1 kHz were used. The gas pressure was 1 Pa.
X-ray diffraction results from the near-surface region of the implanted sample showed small peaks of the carbide phases next to dominant peaks of the metal target. Secondary ion mass spectrometry and X-ray photoelectron spectroscopy gave concentration versus depth profiles of the implanted carbon. The chemical shift proved that metal–carbon bonds had been formed. The profiles showed a thin carbon film on top, followed by a shallow implantation profile. The amount of implanted carbon increased with the process time.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2007 |
| Autor(en): | Baba, Koumei ; Hatada, Ruriko ; Flege, Stefan ; Kraft, Gunther ; Ensinger, Wolfgang |
| Art des Eintrags: | Bibliographie |
| Titel: | Formation of thin carbide films of titanium and tantalum by methane plasma immersion ion implantation |
| Sprache: | Englisch |
| Publikationsjahr: | April 2007 |
| Verlag: | Elsevier |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Nuclear Instruments and Methods in Physics Research Section B |
| Jahrgang/Volume einer Zeitschrift: | 257 |
| (Heft-)Nummer: | 1-2 |
| Kurzbeschreibung (Abstract): | Titanium and tantalum samples were treated by high voltage pulses at −20 kV in an atmosphere of methane. The high voltage created a plasma, from which ions of methane and its fragments were accelerated towards the sample and were implanted. Process times between 0.5 and 2 h at a pulse repetition rate of 1 kHz were used. The gas pressure was 1 Pa. X-ray diffraction results from the near-surface region of the implanted sample showed small peaks of the carbide phases next to dominant peaks of the metal target. Secondary ion mass spectrometry and X-ray photoelectron spectroscopy gave concentration versus depth profiles of the implanted carbon. The chemical shift proved that metal–carbon bonds had been formed. The profiles showed a thin carbon film on top, followed by a shallow implantation profile. The amount of implanted carbon increased with the process time. |
| Freie Schlagworte: | 52.77.−j; 52.77.Dq; 81.05.Je; 81.15.−z |
| Zusätzliche Informationen: | Ion Beam Modification of Materials — Proceedings of the 15th International Conference on Ion Beam Modification of Materials 15th International Conference on Ion Beam Modification of Materials |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Materialanalytik |
| Hinterlegungsdatum: | 20 Nov 2008 08:28 |
| Letzte Änderung: | 20 Feb 2020 13:23 |
| PPN: | |
| Sponsoren: | The authors would like to thank the Deutsche Forschungsgemeinschaft (DFG) for financial support with the project EN207/19-1. |
| Export: | |
| Suche nach Titel in: | TUfind oder in Google |
 |
Frage zum Eintrag |
Optionen (nur für Redakteure)
 |
Redaktionelle Details anzeigen |
Drucken
Impressum